The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si

P G Coleman, R E Harding, G Davies, J Tan, J Wong-Leung

Research output: Contribution to journal › Article › peer-review

8 Citations (SciVal)

Original language	English
Pages (from-to)	695-700
Number of pages	6
Journal	Journal of Materials Science-Materials in Electronics
Volume	18
Issue number	7
Publication status	Published - 2007

ID number: ISI:000246175200004

Cite this

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title = "The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si",

author = "Coleman, {P G} and Harding, {R E} and G Davies and J Tan and J Wong-Leung",

note = "ID number: ISI:000246175200004",

year = "2007",

language = "English",

volume = "18",

pages = "695--700",

journal = "Journal of Materials Science-Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si

AU - Coleman, P G

AU - Harding, R E

AU - Davies, G

AU - Tan, J

AU - Wong-Leung, J

N1 - ID number: ISI:000246175200004

PY - 2007

Y1 - 2007

M3 - Article

SN - 0957-4522

VL - 18

SP - 695

EP - 700

JO - Journal of Materials Science-Materials in Electronics

JF - Journal of Materials Science-Materials in Electronics

IS - 7

ER -