The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field

M E Nasir, D W E Allsopp, C R Bowen, G Hubbard, K P Parsons

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This paper describes the formation of mono-domain highly ordered nanoporous alumina on the scale of a 2 inch diameter silicon wafer by anodization of aluminium evaporated on a patterned SiO2 mask on a silicon substrate. The position of the ordered pores correlates with holes in the SiO2 mask, which guide the electric field during anodization and initiates pore nucleation. The technique is suitable for the production of ordered nanoporous alumina on a wafer scale and overcomes the time, cost and scale limitations of existing processes.
Original languageEnglish
Article number105303
JournalNanotechnology
Volume21
Issue number10
DOIs
Publication statusPublished - 16 Feb 2010

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Aluminum Oxide
Masks
Alumina
Electric fields
Fabrication
Silicon
Aluminum
Silicon wafers
Nucleation
Substrates
Costs

Cite this

The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field. / Nasir, M E; Allsopp, D W E; Bowen, C R; Hubbard, G; Parsons, K P.

In: Nanotechnology, Vol. 21, No. 10, 105303, 16.02.2010.

Research output: Contribution to journalArticle

Nasir, M E ; Allsopp, D W E ; Bowen, C R ; Hubbard, G ; Parsons, K P. / The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field. In: Nanotechnology. 2010 ; Vol. 21, No. 10.
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