This paper describes the formation of mono-domain highly ordered nanoporous alumina on the scale of a 2 inch diameter silicon wafer by anodization of aluminium evaporated on a patterned SiO2 mask on a silicon substrate. The position of the ordered pores correlates with holes in the SiO2 mask, which guide the electric field during anodization and initiates pore nucleation. The technique is suitable for the production of ordered nanoporous alumina on a wafer scale and overcomes the time, cost and scale limitations of existing processes.
Nasir, M. E., Allsopp, D. W. E., Bowen, C. R., Hubbard, G., & Parsons, K. P. (2010). The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field. Nanotechnology, 21(10), . https://doi.org/10.1088/0957-4484/21/10/105303