The evolution of transverse modes in GaInNAs VCSELs

M. Othman; K. Tastavridis; J. C L Yong; J. Rorison; R. V. Penty; I. H. White

The evolution of transverse modes in GaInNAs VCSELs

M. Othman
, K. Tastavridis
, J. C L Yong
, J. Rorison
, R. V. Penty
, I. H. White

Vice Chancellor's Office

University of Bristol
University of Cambridge

Research output: Contribution to journal › Conference article › peer-review

Abstract

A circularly symmetric structure is assumed. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with Al(Ga)As/GaAs p- and n-type DBR stack.

Original language	English
Pages (from-to)	273-274
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
Publication status	Published - 1 Dec 2002
Event	2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, UK United Kingdom Duration: 10 Nov 2002 → 14 Nov 2002

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Cite this

@article{cb0ab7ad7a45444f824956a5565e7880,

title = "The evolution of transverse modes in GaInNAs VCSELs",

abstract = "A circularly symmetric structure is assumed. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with Al(Ga)As/GaAs p- and n-type DBR stack.",

author = "M. Othman and K. Tastavridis and Yong, \{J. C L\} and J. Rorison and Penty, \{R. V.\} and White, \{I. H.\}",

year = "2002",

month = dec,

day = "1",

language = "English",

volume = "1",

pages = "273--274",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "IEEE",

note = "2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 10-11-2002 Through 14-11-2002",

}

TY - JOUR

T1 - The evolution of transverse modes in GaInNAs VCSELs

AU - Othman, M.

AU - Tastavridis, K.

AU - Yong, J. C L

AU - Rorison, J.

AU - Penty, R. V.

AU - White, I. H.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A circularly symmetric structure is assumed. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with Al(Ga)As/GaAs p- and n-type DBR stack.

AB - A circularly symmetric structure is assumed. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with Al(Ga)As/GaAs p- and n-type DBR stack.

UR - https://www.scopus.com/pages/publications/0036929994

M3 - Conference article

AN - SCOPUS:0036929994

SN - 1092-8081

VL - 1

SP - 273

EP - 274

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 10 November 2002 through 14 November 2002

ER -

The evolution of transverse modes in GaInNAs VCSELs

Abstract

ASJC Scopus subject areas

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