The evolution of transverse modes in GaInNAs VCSELs

M. Othman, K. Tastavridis, J. C L Yong, J. Rorison, R. V. Penty, I. H. White

Research output: Contribution to journalConference article

Abstract

A circularly symmetric structure is assumed. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with Al(Ga)As/GaAs p- and n-type DBR stack.

Original languageEnglish
Pages (from-to)273-274
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - 1 Dec 2002
Event2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, UK United Kingdom
Duration: 10 Nov 200214 Nov 2002

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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