Abstract
A circularly symmetric structure is assumed. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with Al(Ga)As/GaAs p- and n-type DBR stack.
Original language | English |
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Pages (from-to) | 273-274 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 1 |
Publication status | Published - 1 Dec 2002 |
Event | 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, UK United Kingdom Duration: 10 Nov 2002 → 14 Nov 2002 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering