The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Y. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Y. G. Shreter

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)795-799
Number of pages5
JournalSemiconductors
Volume39
Issue number7
Publication statusPublished - 2005

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