The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

N. I. Bochkareva; E. A. Zhirnov; A. A. Efremov; Y. T. Rebane; R. I. Gorbunov; A. V. Klochkov; D. A. Lavrinovich; Y. G. Shreter

The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Y. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Y. G. Shreter

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

Original language	English
Pages (from-to)	795-799
Number of pages	5
Journal	Semiconductors
Volume	39
Issue number	7
Publication status	Published - 2005

Cite this

@article{33359c809e7b474e93e98a561e04c72a,

title = "The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes",

author = "Bochkareva, {N. I.} and Zhirnov, {E. A.} and Efremov, {A. A.} and Rebane, {Y. T.} and Gorbunov, {R. I.} and Klochkov, {A. V.} and Lavrinovich, {D. A.} and Shreter, {Y. G.}",

note = "ID number: ISI:000230596300014",

year = "2005",

language = "English",

volume = "39",

pages = "795--799",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "7",

}

TY - JOUR

T1 - The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

AU - Bochkareva, N. I.

AU - Zhirnov, E. A.

AU - Efremov, A. A.

AU - Rebane, Y. T.

AU - Gorbunov, R. I.

AU - Klochkov, A. V.

AU - Lavrinovich, D. A.

AU - Shreter, Y. G.

N1 - ID number: ISI:000230596300014

PY - 2005

Y1 - 2005

M3 - Article

SN - 1063-7826

VL - 39

SP - 795

EP - 799

JO - Semiconductors

JF - Semiconductors

IS - 7

ER -