The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Y. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Y. G. Shreter

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)795-799
Number of pages5
JournalSemiconductors
Volume39
Issue number7
Publication statusPublished - 2005

Cite this

Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Y. T., Gorbunov, R. I., Klochkov, A. V., Lavrinovich, D. A., & Shreter, Y. G. (2005). The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes. Semiconductors, 39(7), 795-799.