Original language | English |
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Pages (from-to) | 795-799 |
Number of pages | 5 |
Journal | Semiconductors |
Volume | 39 |
Issue number | 7 |
Publication status | Published - 2005 |
The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Y. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Y. G. Shreter
Research output: Contribution to journal › Article › peer-review
7
Citations
(SciVal)