The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs

Despina C. Moschou, Giannis P. Kontogiannopoulos, Dimitrios N. Kouvatsos, Apostolos T. Voutsas

Research output: Contribution to journalArticle

Abstract

Polysilicon TFTs were fabricated using solid phase crystallization (SPC) and also two different excimer laser annealing techniques (ELA) for polysilicon crystallization. Moreover, we tried two different gate oxide deposition methods, using PECVD or TEOS LPCVD. Comparing the characteristics of the fabricated TFTs, we were able to probe the effects of the polysilicon crystallization techniques and the gate oxide deposition methods on TFT performance and reliability. This way, an optimization of the TFT fabrication procedure could be possible.

Original languageEnglish
Pages (from-to)3630-3633
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number12
DOIs
Publication statusPublished - 2008

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insulators
crystallization
laser annealing
oxides
excimer lasers
solid phases
fabrication
optimization
probes

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs. / Moschou, Despina C.; Kontogiannopoulos, Giannis P.; Kouvatsos, Dimitrios N.; Voutsas, Apostolos T.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 12, 2008, p. 3630-3633.

Research output: Contribution to journalArticle

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