TY - JOUR
T1 - The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs
AU - Moschou, Despina C.
AU - Kontogiannopoulos, Giannis P.
AU - Kouvatsos, Dimitrios N.
AU - Voutsas, Apostolos T.
PY - 2008
Y1 - 2008
N2 - Polysilicon TFTs were fabricated using solid phase crystallization (SPC) and also two different excimer laser annealing techniques (ELA) for polysilicon crystallization. Moreover, we tried two different gate oxide deposition methods, using PECVD or TEOS LPCVD. Comparing the characteristics of the fabricated TFTs, we were able to probe the effects of the polysilicon crystallization techniques and the gate oxide deposition methods on TFT performance and reliability. This way, an optimization of the TFT fabrication procedure could be possible.
AB - Polysilicon TFTs were fabricated using solid phase crystallization (SPC) and also two different excimer laser annealing techniques (ELA) for polysilicon crystallization. Moreover, we tried two different gate oxide deposition methods, using PECVD or TEOS LPCVD. Comparing the characteristics of the fabricated TFTs, we were able to probe the effects of the polysilicon crystallization techniques and the gate oxide deposition methods on TFT performance and reliability. This way, an optimization of the TFT fabrication procedure could be possible.
UR - http://www.scopus.com/inward/record.url?scp=57349176993&partnerID=8YFLogxK
UR - https://doi.org/10.1002/pssc.200780146
U2 - 10.1002/pssc.200780146
DO - 10.1002/pssc.200780146
M3 - Article
AN - SCOPUS:57349176993
SN - 1862-6351
VL - 5
SP - 3630
EP - 3633
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 12
ER -