The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe

T. Martin, P. J. Wright, R. Blunt, A. Pooth, C. Liu, A. Gott, L. Lees

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The capability to deliver stable repeatable epitaxy optimised for breakdown, current slump, uniformity and tuned to individual foundry specifications and processes is critical to a successful supply chain in GaN RF devices. In this paper we will provide an overview of the advances at IQE Europe in the development of GaN H-FET epitaxy for RF applications. The GaN epitaxy at IQE Europe is undertaken within the existing foundry epitaxy facility and where appropriate shares the established capability for wafer handling and characterisation. The focus of the development is on epitaxy on 100mm diameter semi-insulating SiC substrates sourced from European based suppliers, but data obtained using both 3 dia SiC and 150mm dia Silicon substrates is presented.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
PublisherIEEE
Pages218-220
Number of pages3
ISBN (Print)9782874870361
DOIs
Publication statusPublished - 1 Jan 2014
Event9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, UK United Kingdom
Duration: 6 Oct 20147 Oct 2014

Conference

Conference9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
CountryUK United Kingdom
CityRome
Period6/10/147/10/14

Fingerprint

epitaxy
foundries
specifications
field effect transistors
breakdown
wafers
silicon

Keywords

  • Field effect transistors
  • Gallium nitride
  • III-V semiconductor materials
  • Semiconductor growth

Cite this

Martin, T., Wright, P. J., Blunt, R., Pooth, A., Liu, C., Gott, A., & Lees, L. (2014). The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 218-220). IEEE. https://doi.org/10.1109/EuMIC.2014.6997831

The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. / Martin, T.; Wright, P. J.; Blunt, R.; Pooth, A.; Liu, C.; Gott, A.; Lees, L.

European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE, 2014. p. 218-220.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Martin, T, Wright, PJ, Blunt, R, Pooth, A, Liu, C, Gott, A & Lees, L 2014, The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE, pp. 218-220, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, UK United Kingdom, 6/10/14. https://doi.org/10.1109/EuMIC.2014.6997831
Martin T, Wright PJ, Blunt R, Pooth A, Liu C, Gott A et al. The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE. 2014. p. 218-220 https://doi.org/10.1109/EuMIC.2014.6997831
Martin, T. ; Wright, P. J. ; Blunt, R. ; Pooth, A. ; Liu, C. ; Gott, A. ; Lees, L. / The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE, 2014. pp. 218-220
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