The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe

T. Martin; P. J. Wright; R. Blunt; A. Pooth; C. Liu; A. Gott; L. Lees

doi:10.1109/EuMIC.2014.6997831

The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe

T. Martin, P. J. Wright, R. Blunt, A. Pooth, C. Liu, A. Gott, L. Lees

University of Bath

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

The capability to deliver stable repeatable epitaxy optimised for breakdown, current slump, uniformity and tuned to individual foundry specifications and processes is critical to a successful supply chain in GaN RF devices. In this paper we will provide an overview of the advances at IQE Europe in the development of GaN H-FET epitaxy for RF applications. The GaN epitaxy at IQE Europe is undertaken within the existing foundry epitaxy facility and where appropriate shares the established capability for wafer handling and characterisation. The focus of the development is on epitaxy on 100mm diameter semi-insulating SiC substrates sourced from European based suppliers, but data obtained using both 3 dia SiC and 150mm dia Silicon substrates is presented.

Original language	English
Title of host publication	European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Publisher	IEEE
Pages	218-220
Number of pages	3
ISBN (Print)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997831
Publication status	Published - 1 Jan 2014
Event	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, UK United Kingdom Duration: 6 Oct 2014 → 7 Oct 2014

Conference

Conference	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Country/Territory	UK United Kingdom
City	Rome
Period	6/10/14 → 7/10/14

Keywords

Field effect transistors
Gallium nitride
III-V semiconductor materials
Semiconductor growth

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10.1109/EuMIC.2014.6997831

Cite this

Martin, T., Wright, P. J., Blunt, R., Pooth, A., Liu, C., Gott, A., & Lees, L. (2014). The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 218-220). IEEE. https://doi.org/10.1109/EuMIC.2014.6997831

The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. / Martin, T.; Wright, P. J.; Blunt, R. et al.
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE, 2014. p. 218-220.

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Martin, T, Wright, PJ, Blunt, R, Pooth, A, Liu, C, Gott, A & Lees, L 2014, The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE, pp. 218-220, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, UK United Kingdom, 6/10/14. https://doi.org/10.1109/EuMIC.2014.6997831

Martin T, Wright PJ, Blunt R, Pooth A, Liu C, Gott A et al. The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. IEEE. 2014. p. 218-220 doi: 10.1109/EuMIC.2014.6997831

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The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe

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Keywords

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