Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

N Overend, Alain Nogaret, B Gallagher, pc main, M Henini, C H Marrows, MA Howson, sp beaumont

Research output: Contribution to journalArticle

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Abstract

We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.
Original languageEnglish
Pages (from-to)1724-1726
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number14
DOIs
Publication statusPublished - 6 Apr 1998

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semiconductor devices
temperature dependence
electron gas
magnetization
electrical resistivity
optimization
room temperature
temperature

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Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices. / Overend, N; Nogaret, Alain; Gallagher, B; main, pc; Henini, M; Marrows, C H; Howson, MA; beaumont, sp.

In: Applied Physics Letters, Vol. 72, No. 14, 06.04.1998, p. 1724-1726.

Research output: Contribution to journalArticle

Overend, N, Nogaret, A, Gallagher, B, main, P, Henini, M, Marrows, CH, Howson, MA & beaumont, S 1998, 'Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices', Applied Physics Letters, vol. 72, no. 14, pp. 1724-1726. https://doi.org/10.1063/1.121164
Overend, N ; Nogaret, Alain ; Gallagher, B ; main, pc ; Henini, M ; Marrows, C H ; Howson, MA ; beaumont, sp. / Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices. In: Applied Physics Letters. 1998 ; Vol. 72, No. 14. pp. 1724-1726.
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