Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

N Overend; Alain Nogaret; B Gallagher; pc main; M Henini; C H Marrows; MA Howson; sp beaumont

doi:10.1063/1.121164

Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

N Overend, Alain Nogaret, B Gallagher, pc main, M Henini, C H Marrows, MA Howson, sp beaumont

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Abstract

We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.

Original language	English
Pages (from-to)	1724-1726
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	14
DOIs	https://doi.org/10.1063/1.121164
Publication status	Published - 6 Apr 1998

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abstract = "We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.",

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AU - Overend, N

AU - Nogaret, Alain

AU - Gallagher, B

AU - main, pc

AU - Henini, M

AU - Marrows, C H

AU - Howson, MA

AU - beaumont, sp

PY - 1998/4/6

Y1 - 1998/4/6

N2 - We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.

AB - We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.

U2 - 10.1063/1.121164

DO - 10.1063/1.121164

M3 - Article

SN - 0003-6951

VL - 72

SP - 1724

EP - 1726

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

Abstract

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