We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.
Overend, N., Nogaret, A., Gallagher, B., main, P., Henini, M., Marrows, C. H., ... beaumont, S. (1998). Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices. Applied Physics Letters, 72(14), 1724-1726. https://doi.org/10.1063/1.121164