Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

N Overend, Alain Nogaret, B Gallagher, pc main, M Henini, C H Marrows, MA Howson, sp beaumont

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We investigate a new type of magnetoresistance(MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagneticgrating defined on the surface of the device. We observe an increase in resistance of up to ∼1500% at a temperature of 4 K and ∼1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR.
Original languageEnglish
Pages (from-to)1724-1726
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 6 Apr 1998


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