Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

J. D. Ralston, P. Chazan, E. C. Larkins, M. Maier, F. R. Laughton, M. K.Abd Rahman, I. H. White

Research output: Contribution to journalArticle

Abstract

Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

Original languageEnglish
Pages (from-to)651-653
Number of pages3
JournalElectronics Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 13 Apr 1995

Keywords

  • Modulation doping
  • Semiconductor doping
  • Semiconductor junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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