Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

J. D. Ralston, P. Chazan, E. C. Larkins, M. Maier, F. R. Laughton, M. K.Abd Rahman, I. H. White

Research output: Contribution to journalArticle

Abstract

Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

Original languageEnglish
Pages (from-to)651-653
Number of pages3
JournalElectronics Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 13 Apr 1995

Keywords

  • Modulation doping
  • Semiconductor doping
  • Semiconductor junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation. / Ralston, J. D.; Chazan, P.; Larkins, E. C.; Maier, M.; Laughton, F. R.; Rahman, M. K.Abd; White, I. H.

In: Electronics Letters, Vol. 31, No. 8, 13.04.1995, p. 651-653.

Research output: Contribution to journalArticle

Ralston, J. D. ; Chazan, P. ; Larkins, E. C. ; Maier, M. ; Laughton, F. R. ; Rahman, M. K.Abd ; White, I. H. / Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation. In: Electronics Letters. 1995 ; Vol. 31, No. 8. pp. 651-653.
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