Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

J. D. Ralston; P. Chazan; E. C. Larkins; M. Maier; F. R. Laughton; M. K.Abd Rahman; I. H. White

doi:10.1049/el:19950451

Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

J. D. Ralston, P. Chazan, E. C. Larkins, M. Maier, F. R. Laughton, M. K.Abd Rahman, I. H. White

Research output: Contribution to journal › Article › peer-review

Abstract

Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

Original language	English
Pages (from-to)	651-653
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	8
DOIs	https://doi.org/10.1049/el:19950451
Publication status	Published - 13 Apr 1995

Keywords

Modulation doping
Semiconductor doping
Semiconductor junction lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19950451

Cite this

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title = "Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation",

abstract = "Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.",

keywords = "Modulation doping, Semiconductor doping, Semiconductor junction lasers",

author = "Ralston, {J. D.} and P. Chazan and Larkins, {E. C.} and M. Maier and Laughton, {F. R.} and Rahman, {M. K.Abd} and White, {I. H.}",

year = "1995",

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language = "English",

volume = "31",

pages = "651--653",

journal = "Electronics Letters",

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T1 - Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

AU - Ralston, J. D.

AU - Chazan, P.

AU - Larkins, E. C.

AU - Maier, M.

AU - Laughton, F. R.

AU - Rahman, M. K.Abd

AU - White, I. H.

PY - 1995/4/13

Y1 - 1995/4/13

N2 - Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

AB - Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

KW - Modulation doping

KW - Semiconductor doping

KW - Semiconductor junction lasers

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U2 - 10.1049/el:19950451

DO - 10.1049/el:19950451

M3 - Article

AN - SCOPUS:0029293335

SN - 0013-5194

VL - 31

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EP - 653

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

Abstract

Keywords

ASJC Scopus subject areas

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