Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

J. D. Ralston, P. Chazan, E. C. Larkins, M. Maier, F. R. Laughton, M. K.Abd Rahman, I. H. White

Research output: Contribution to journalArticlepeer-review


Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

Original languageEnglish
Pages (from-to)651-653
Number of pages3
JournalElectronics Letters
Issue number8
Publication statusPublished - 13 Apr 1995


  • Modulation doping
  • Semiconductor doping
  • Semiconductor junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation'. Together they form a unique fingerprint.

Cite this