Systematic design of dissipative and regenerative snubbers

Francis Robinson; B W Williams

doi:10.1109/IAS.1989.96814

Systematic design of dissipative and regenerative snubbers

Department of Electronic & Electrical Engineering

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

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Abstract

Current commutation between diodes and switches is possible in hard-switching power stages over a wide di/dt range (10-1000+A/ mu s) with modern power devices and hardware practice. However, a definitive procedure does not exist for setting di/dt at diode reverse recovery. Diode turn-off performance is therefore examined, using IGBTs (insulated-gate bipolar transistors) to switch the diode current, to establish whether there exists an optimal di/dt that minimizes energy loss associated with diode recovery, when simple snubber-inductance reset circuits are used. Destructive parasitic oscillation, induced in inverse-parallel IGBTs across reverse-recovering freewheel diodes in IGBT modules, was observed during experimentation. The results indicate that snubberless power-stage

Original language	English
Title of host publication	Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting
Place of Publication	San Diego, USA
Publisher	IEEE
Pages	1320-1327
Number of pages	8
Volume	2
DOIs	https://doi.org/10.1109/IAS.1989.96814
Publication status	Published - 1 Jan 1989
Event	Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting - San Diego, USA United States Duration: 1 Oct 1989 → 5 Oct 1989

Conference

Conference	Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting
Country/Territory	USA United States
City	San Diego
Period	1/10/89 → 5/10/89

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10.1109/IAS.1989.96814

Systematic design of dissipative and regenerative snubbers
(c) 1989 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
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Robinson, F & Williams, BW 1989, Systematic design of dissipative and regenerative snubbers. in Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting. vol. 2, IEEE, San Diego, USA, pp. 1320-1327, Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting , San Diego, USA United States, 1/10/89. https://doi.org/10.1109/IAS.1989.96814

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abstract = "Current commutation between diodes and switches is possible in hard-switching power stages over a wide di/dt range (10-1000+A/ mu s) with modern power devices and hardware practice. However, a definitive procedure does not exist for setting di/dt at diode reverse recovery. Diode turn-off performance is therefore examined, using IGBTs (insulated-gate bipolar transistors) to switch the diode current, to establish whether there exists an optimal di/dt that minimizes energy loss associated with diode recovery, when simple snubber-inductance reset circuits are used. Destructive parasitic oscillation, induced in inverse-parallel IGBTs across reverse-recovering freewheel diodes in IGBT modules, was observed during experimentation. The results indicate that snubberless power-stage ",

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Systematic design of dissipative and regenerative snubbers

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