Abstract
Current commutation between diodes and switches is possible in hard-switching power stages over a wide di/dt range (10-1000+A/ mu s) with modern power devices and hardware practice. However, a definitive procedure does not exist for setting di/dt at diode reverse recovery. Diode turn-off performance is therefore examined, using IGBTs (insulated-gate bipolar transistors) to switch the diode current, to establish whether there exists an optimal di/dt that minimizes energy loss associated with diode recovery, when simple snubber-inductance reset circuits are used. Destructive parasitic oscillation, induced in inverse-parallel IGBTs across reverse-recovering freewheel diodes in IGBT modules, was observed during experimentation. The results indicate that snubberless power-stage
Original language | English |
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Title of host publication | Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting |
Place of Publication | San Diego, USA |
Publisher | IEEE |
Pages | 1320-1327 |
Number of pages | 8 |
Volume | 2 |
DOIs | |
Publication status | Published - 1 Jan 1989 |
Event | Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting - San Diego, USA United States Duration: 1 Oct 1989 → 5 Oct 1989 |
Conference
Conference | Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting |
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Country/Territory | USA United States |
City | San Diego |
Period | 1/10/89 → 5/10/89 |