Systematic design of dissipative and regenerative snubbers

Francis Robinson, B W Williams

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Abstract

Current commutation between diodes and switches is possible in hard-switching power stages over a wide di/dt range (10-1000+A/ mu s) with modern power devices and hardware practice. However, a definitive procedure does not exist for setting di/dt at diode reverse recovery. Diode turn-off performance is therefore examined, using IGBTs (insulated-gate bipolar transistors) to switch the diode current, to establish whether there exists an optimal di/dt that minimizes energy loss associated with diode recovery, when simple snubber-inductance reset circuits are used. Destructive parasitic oscillation, induced in inverse-parallel IGBTs across reverse-recovering freewheel diodes in IGBT modules, was observed during experimentation. The results indicate that snubberless power-stage
Original languageEnglish
Title of host publicationConference Record of the 1989 IEEE Industry Applications Society Annual Meeting
Place of PublicationSan Diego, USA
PublisherIEEE
Pages1320-1327
Number of pages8
Volume2
DOIs
Publication statusPublished - 1 Jan 1989
EventConference Record of the 1989 IEEE Industry Applications Society Annual Meeting - San Diego, USA United States
Duration: 1 Oct 19895 Oct 1989

Conference

ConferenceConference Record of the 1989 IEEE Industry Applications Society Annual Meeting
CountryUSA United States
CitySan Diego
Period1/10/895/10/89

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Robinson, F., & Williams, B. W. (1989). Systematic design of dissipative and regenerative snubbers. In Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting (Vol. 2, pp. 1320-1327). San Diego, USA: IEEE. https://doi.org/10.1109/IAS.1989.96814