Abstract
| Language | English |
|---|---|
| Pages | 1712-1719 |
| Journal | European Journal of Inorganic Chemistry |
| Volume | 2016 |
| Issue number | 11 |
| Early online date | 18 Mar 2016 |
| DOIs | |
| Status | Published - Apr 2016 |
Fingerprint
Keywords
- Aluminium
- Gallium
- Indium
- Oxides, Chemical Vapour Deposition.
Cite this
Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]. / Cosham, Samuel D.; Hamilton, Jeff A.; Hill, Michael S.; Johnson, Andrew L.; Molloy, Kieran C.
In: European Journal of Inorganic Chemistry, Vol. 2016, No. 11, 04.2016, p. 1712-1719.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]
AU - Cosham, Samuel D.
AU - Hamilton, Jeff A.
AU - Hill, Michael S.
AU - Johnson, Andrew L.
AU - Molloy, Kieran C.
PY - 2016/4
Y1 - 2016/4
N2 - A family of group 13 metal dimethyl complexes of the general form [Me2M{ MeC(O)CHC(NCH2CH2OMe)CF3}] (M = Al (2), Ga (3) or In (4)) have been synthesised by reaction of the isolated free ligand (1) with the corresponding trimethyl-metal reagents. The isolated complexes (2-4) were characterised by elemental analysis, NMR spectroscopy, and the molecular structures of the complexes were determined by single crystal X-ray diffraction which reveals the compounds to be monomeric 5 coordinate complexes with coordination of the pendent ether bearing lariat in the solid state. Thermogravimetric analysis showed complexes 2-4 all to have residual masses, at 200 °C, of 2.4% or less well below the value for the respective metal oxides, and vapour pressure measurements show the indium complex (4) to be an order of magnitude less volatile (0.09 Torr at 80 oC) than the Al (2) or Ga (3) derivatives despite being isoleptic systems. Complexes 2-4 have all been investigated for their utility in the LP-MOCVD growth of the respective metal oxides in the absence of additional oxidant at 400 °C on silicon substrates.
AB - A family of group 13 metal dimethyl complexes of the general form [Me2M{ MeC(O)CHC(NCH2CH2OMe)CF3}] (M = Al (2), Ga (3) or In (4)) have been synthesised by reaction of the isolated free ligand (1) with the corresponding trimethyl-metal reagents. The isolated complexes (2-4) were characterised by elemental analysis, NMR spectroscopy, and the molecular structures of the complexes were determined by single crystal X-ray diffraction which reveals the compounds to be monomeric 5 coordinate complexes with coordination of the pendent ether bearing lariat in the solid state. Thermogravimetric analysis showed complexes 2-4 all to have residual masses, at 200 °C, of 2.4% or less well below the value for the respective metal oxides, and vapour pressure measurements show the indium complex (4) to be an order of magnitude less volatile (0.09 Torr at 80 oC) than the Al (2) or Ga (3) derivatives despite being isoleptic systems. Complexes 2-4 have all been investigated for their utility in the LP-MOCVD growth of the respective metal oxides in the absence of additional oxidant at 400 °C on silicon substrates.
KW - Aluminium
KW - Gallium
KW - Indium
KW - Oxides, Chemical Vapour Deposition.
UR - http://dx.doi.org/10.1002/ejic.201600023
U2 - 10.1002/ejic.201600023
DO - 10.1002/ejic.201600023
M3 - Article
VL - 2016
SP - 1712
EP - 1719
JO - European Journal of Inorganic Chemistry
T2 - European Journal of Inorganic Chemistry
JF - European Journal of Inorganic Chemistry
SN - 1434-1948
IS - 11
ER -