Synthesis, characterization, and materials chemistry of group 4 silylimides

This paper focuses on the development of potential single source precursors for M-N-Si (M = Ti, Zr or Hf) thin films. The titanium, zirconium, and hafnium silylimides (Me(2)N)(2)MNSiR(1)R(2)R(3) [R(1) = R(2) = R(3) = Ph, M = Ti(1), Zr (2), Hf (3); R(1) = R(2) = R(3) = Et, M = Ti (4), Zr (5), Hf (6); R(1) = R(2) = Me, R(3) = (t)Bu, M = Ti (7), Zr (8), Hf (9); R(1) = R(2) = R(3) = NMe(2), M = Ti (10), Zr (11), Hf (12)] have been synthesized by the reaction of M(NMe(2))(4) and R(3)R(2)R(1)SiNH(2). All compounds are notably sensitive to air and moisture. Compounds 1, 2, 4, and 7-10 have been structurally characterized, and all are dimeric, with the general formula [M(NMe(2))(2)(mu-NSiR(3))](2), in which the mu(2)-NSiR(3) groups bridges two four-coordinate metal centers. The hafnium compound 3 possesses the same basic dimeric structure but shows additional incorporation of liberated HNMe(2) bonded to one metal. Compounds 11 and 12 are also both dimeric but also incorporate additional mu(2)-NMe(2) groups, which bridge Si and either Zr or Hf metal centers in the solid state. The Zr and Hf metal centers are both five-coordinated in these species. Aerosol-assisted CVD (AA-CVD) using 4-7 and 9-12 as precursors generates amorphous films containing M, N, Si, C, and O; the films are dominated by MO(2) with smaller contributions from MN, MC and MSiON based on XPS binding energies.