Synthesis and structural characterisation of the apatite-type phases La10-xSi6O26+z doped with Ga

J E H Sansom, J R Tolchard, P R Slater, M S Islam

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Abstract

Apatite-type oxides of general formula (La/Sr)(10-x)Si6O26+y have been attracting considerable interest recently, because of their observed high oxide ion conductivity. In this paper, we report the effects on the conductivity of Ga doping at the Si site. For samples that are nominally stoichiometric in oxygen, La9.33+x/3Si6-xGaxO6 (0 less than or equal to x less than or equal to 2), we find that the oxide ion conductivity increases with Ga content up to a maximum value (sigma(500 degreesC)= 1.3 x 10(-3) S cm(-1)) for x = 1.5, before decreasing with further Ga incorporation. The conductivity data is discussed in relation to results from other doping studies and neutron powder diffraction structural data collected for the samples La9.67Si5GaO26 and La10Si4Ga2O26. In terms of the latter, the data shows a difference in space group (from P6(3) to P6(3)/m) between the samples. In addition, there is a larger anisotropy of the thermal displacement parameters for the channel oxygens in La9.67Si5GaO26, which is consistent with the higher conductivity of this sample. (C) 2004 Elsevier B.V All rights reserved.
LanguageEnglish
Pages17-22
Number of pages6
JournalSolid State Ionics
Volume167
Issue number1-2
DOIs
StatusPublished - 2004

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Apatites
Apatite
apatites
Oxides
conductivity
synthesis
Doping (additives)
Ions
Oxygen
Neutron powder diffraction
oxides
Anisotropy
oxygen
ions
neutrons
anisotropy
diffraction

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Synthesis and structural characterisation of the apatite-type phases La10-xSi6O26+z doped with Ga. / Sansom, J E H; Tolchard, J R; Slater, P R; Islam, M S.

In: Solid State Ionics, Vol. 167, No. 1-2, 2004, p. 17-22.

Research output: Contribution to journalArticle

Sansom, J E H ; Tolchard, J R ; Slater, P R ; Islam, M S. / Synthesis and structural characterisation of the apatite-type phases La10-xSi6O26+z doped with Ga. In: Solid State Ionics. 2004 ; Vol. 167, No. 1-2. pp. 17-22
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abstract = "Apatite-type oxides of general formula (La/Sr)(10-x)Si6O26+y have been attracting considerable interest recently, because of their observed high oxide ion conductivity. In this paper, we report the effects on the conductivity of Ga doping at the Si site. For samples that are nominally stoichiometric in oxygen, La9.33+x/3Si6-xGaxO6 (0 less than or equal to x less than or equal to 2), we find that the oxide ion conductivity increases with Ga content up to a maximum value (sigma(500 degreesC)= 1.3 x 10(-3) S cm(-1)) for x = 1.5, before decreasing with further Ga incorporation. The conductivity data is discussed in relation to results from other doping studies and neutron powder diffraction structural data collected for the samples La9.67Si5GaO26 and La10Si4Ga2O26. In terms of the latter, the data shows a difference in space group (from P6(3) to P6(3)/m) between the samples. In addition, there is a larger anisotropy of the thermal displacement parameters for the channel oxygens in La9.67Si5GaO26, which is consistent with the higher conductivity of this sample. (C) 2004 Elsevier B.V All rights reserved.",
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AU - Tolchard,J R

AU - Slater,P R

AU - Islam,M S

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N2 - Apatite-type oxides of general formula (La/Sr)(10-x)Si6O26+y have been attracting considerable interest recently, because of their observed high oxide ion conductivity. In this paper, we report the effects on the conductivity of Ga doping at the Si site. For samples that are nominally stoichiometric in oxygen, La9.33+x/3Si6-xGaxO6 (0 less than or equal to x less than or equal to 2), we find that the oxide ion conductivity increases with Ga content up to a maximum value (sigma(500 degreesC)= 1.3 x 10(-3) S cm(-1)) for x = 1.5, before decreasing with further Ga incorporation. The conductivity data is discussed in relation to results from other doping studies and neutron powder diffraction structural data collected for the samples La9.67Si5GaO26 and La10Si4Ga2O26. In terms of the latter, the data shows a difference in space group (from P6(3) to P6(3)/m) between the samples. In addition, there is a larger anisotropy of the thermal displacement parameters for the channel oxygens in La9.67Si5GaO26, which is consistent with the higher conductivity of this sample. (C) 2004 Elsevier B.V All rights reserved.

AB - Apatite-type oxides of general formula (La/Sr)(10-x)Si6O26+y have been attracting considerable interest recently, because of their observed high oxide ion conductivity. In this paper, we report the effects on the conductivity of Ga doping at the Si site. For samples that are nominally stoichiometric in oxygen, La9.33+x/3Si6-xGaxO6 (0 less than or equal to x less than or equal to 2), we find that the oxide ion conductivity increases with Ga content up to a maximum value (sigma(500 degreesC)= 1.3 x 10(-3) S cm(-1)) for x = 1.5, before decreasing with further Ga incorporation. The conductivity data is discussed in relation to results from other doping studies and neutron powder diffraction structural data collected for the samples La9.67Si5GaO26 and La10Si4Ga2O26. In terms of the latter, the data shows a difference in space group (from P6(3) to P6(3)/m) between the samples. In addition, there is a larger anisotropy of the thermal displacement parameters for the channel oxygens in La9.67Si5GaO26, which is consistent with the higher conductivity of this sample. (C) 2004 Elsevier B.V All rights reserved.

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