Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route

J J Scragg, P J Dale, Laurence M Peter

Research output: Contribution to journalArticlepeer-review

222 Citations (Scopus)


An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu3+/2+ redox couple. The differing effects of using elemental sulphur and H2S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity.

Original languageEnglish
Pages (from-to)2481-2484
Number of pages4
JournalThin Solid Films
Issue number7
Early online date8 Nov 2008
Publication statusPublished - 2 Feb 2009
EventSymposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference - Strasbourg, France
Duration: 2 Feb 2009 → …


  • photovoltaics
  • Cu2ZnSnS4
  • CZTS
  • photoelectrochemistry
  • semiconductor
  • solar cell
  • kesterite


Dive into the research topics of 'Synthesis and characterization of Cu<sub>2</sub>ZnSnS<sub>4</sub> absorber layers by an electrodeposition-annealing route'. Together they form a unique fingerprint.

Cite this