Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route

J J Scragg; P J Dale; Laurence M Peter

doi:10.1016/j.tsf.2008.11.022

Synthesis and characterization of Cu₂ZnSnS₄ absorber layers by an electrodeposition-annealing route

J J Scragg, P J Dale, Laurence M Peter

Department of Chemistry

Université du Luxembourg

Research output: Contribution to journal › Article › peer-review

238 Citations (SciVal)

Abstract

An electrodeposition-annealing route to films of the promising p-type absorber material Cu₂ZnSnS₄ (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu^3+/2+ redox couple. The differing effects of using elemental sulphur and H₂S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity.

Original language	English
Pages (from-to)	2481-2484
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	7
Early online date	8 Nov 2008
DOIs	https://doi.org/10.1016/j.tsf.2008.11.022
Publication status	Published - 2 Feb 2009
Event	Symposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference - Strasbourg, France Duration: 2 Feb 2009 → …

Bibliographical note

Symposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference. Strasbourg, France, 26-30 May 2008

Keywords

photovoltaics
Cu2ZnSnS4
CZTS
photoelectrochemistry
semiconductor
solar cell
kesterite

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10.1016/j.tsf.2008.11.022

Cite this

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title = "Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route",

abstract = "An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu3+/2+ redox couple. The differing effects of using elemental sulphur and H2S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity.",

keywords = "photovoltaics, Cu2ZnSnS4, CZTS, photoelectrochemistry, semiconductor, solar cell, kesterite",

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note = "Symposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference. Strasbourg, France, 26-30 May 2008; Symposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference ; Conference date: 02-02-2009",

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AU - Dale, P J

AU - Peter, Laurence M

N1 - Symposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference. Strasbourg, France, 26-30 May 2008

PY - 2009/2/2

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N2 - An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu3+/2+ redox couple. The differing effects of using elemental sulphur and H2S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity.

AB - An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu3+/2+ redox couple. The differing effects of using elemental sulphur and H2S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity.

KW - photovoltaics

KW - Cu2ZnSnS4

KW - CZTS

KW - photoelectrochemistry

KW - semiconductor

KW - solar cell

KW - kesterite

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DO - 10.1016/j.tsf.2008.11.022

M3 - Article

SN - 0040-6090

VL - 517

SP - 2481

EP - 2484

JO - Thin Solid Films

JF - Thin Solid Films

IS - 7

T2 - Symposium on Thin Film Chalcogenide Photovoltaic Materials held at the EMRS 2008 Spring Conference

Y2 - 2 February 2009

ER -

Synthesis and characterization of Cu₂ZnSnS₄ absorber layers by an electrodeposition-annealing route

Abstract

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SUPERGEN PHOTOVOLTICS MATERIALS FOR THE 21ST CENTURY

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Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route

Abstract

Bibliographical note

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SUPERGEN PHOTOVOLTICS MATERIALS FOR THE 21ST CENTURY

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Synthesis and characterization of Cu₂ZnSnS₄ absorber layers by an electrodeposition-annealing route