Surface diagnostics of dry etched III-V semiconductor samples using focused ion beam and secondary ion mass spectrometry

Siyuan Yu, Peter Heard, Bulent Cakmak, R. V. Penty, I. H. White

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In order to optimize the H 2/CH 4 reactive ion etching process for InP, the surface composition of etched samples has been analyzed by means of a focused ion beam and secondary ion mass spectrometry. Harmful species of chlorine and oxygen have been identified as causing surface roughness and etch-rate fluctuations. Polymer distribution on the masked surface and etched surface phosphor abundance have been studied for various gas mixtures and rf power, establishing optimized CH 4-rich etching conditions under which surface P content is closest to unetched material and polymer deposition is acceptable.

Original languageEnglish
Pages (from-to)3080-3084
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number6
Publication statusPublished - 1 Dec 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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