Abstract
In order to optimize the H 2/CH 4 reactive ion etching process for InP, the surface composition of etched samples has been analyzed by means of a focused ion beam and secondary ion mass spectrometry. Harmful species of chlorine and oxygen have been identified as causing surface roughness and etch-rate fluctuations. Polymer distribution on the masked surface and etched surface phosphor abundance have been studied for various gas mixtures and rf power, establishing optimized CH 4-rich etching conditions under which surface P content is closest to unetched material and polymer deposition is acceptable.
| Original language | English |
|---|---|
| Pages (from-to) | 3080-3084 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 17 |
| Issue number | 6 |
| Publication status | Published - 1 Dec 1999 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering