The chemically assisted ion beam etching (CAIBE) of InP material was reported. It was shown that surface morphology of InP-based structures improved significantly by use of CAIBE in a H2 atmosphere. The best surface quality was obtained using only Ar/H2 gases at 800V acceleration voltage. A maximum etch rate of 725 Å/min was obtained at 30° ion incidence angle for 2 kV acceleration voltage and 45mA discharge current.
|Publication status||Published - 1 Dec 2001|
|Event||4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan|
Duration: 15 Jul 2001 → 19 Jul 2001
|Conference||4th Pacific Rim Conference on Lasers and Electro-Optics|
|Period||15/07/01 → 19/07/01|
ASJC Scopus subject areas
- Physics and Astronomy(all)