Surface assessment of a chemically assisted ion beam etched InP sample using scanning electron microscopy and atomic force microscopy techniques

Bulent Cakmak, Richard V. Penty, Ian H. White

Research output: Contribution to conferencePaperpeer-review

Abstract

The chemically assisted ion beam etching (CAIBE) of InP material was reported. It was shown that surface morphology of InP-based structures improved significantly by use of CAIBE in a H2 atmosphere. The best surface quality was obtained using only Ar/H2 gases at 800V acceleration voltage. A maximum etch rate of 725 Å/min was obtained at 30° ion incidence angle for 2 kV acceleration voltage and 45mA discharge current.

Original languageEnglish
Publication statusPublished - 1 Dec 2001
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 15 Jul 200119 Jul 2001

Conference

Conference4th Pacific Rim Conference on Lasers and Electro-Optics
CountryJapan
CityChiba
Period15/07/0119/07/01

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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