Surface assessment of a chemically assisted ion beam etched InP sample using scanning electron microscopy and atomic force microscopy techniques

Bulent Cakmak; Richard V. Penty; Ian H. White

Surface assessment of a chemically assisted ion beam etched InP sample using scanning electron microscopy and atomic force microscopy techniques

Bulent Cakmak, Richard V. Penty, Ian H. White

Vice Chancellor's Office

Research output: Contribution to conference › Paper › peer-review

Abstract

The chemically assisted ion beam etching (CAIBE) of InP material was reported. It was shown that surface morphology of InP-based structures improved significantly by use of CAIBE in a H₂ atmosphere. The best surface quality was obtained using only Ar/H₂ gases at 800V acceleration voltage. A maximum etch rate of 725 Å/min was obtained at 30° ion incidence angle for 2 kV acceleration voltage and 45mA discharge current.

Original language	English
Publication status	Published - 1 Dec 2001
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 15 Jul 2001 → 19 Jul 2001

Conference

Conference	4th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	Japan
City	Chiba
Period	15/07/01 → 19/07/01

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Surface assessment of a chemically assisted ion beam etched InP sample using scanning electron microscopy and atomic force microscopy techniques",

abstract = "The chemically assisted ion beam etching (CAIBE) of InP material was reported. It was shown that surface morphology of InP-based structures improved significantly by use of CAIBE in a H2 atmosphere. The best surface quality was obtained using only Ar/H2 gases at 800V acceleration voltage. A maximum etch rate of 725 {\AA}/min was obtained at 30° ion incidence angle for 2 kV acceleration voltage and 45mA discharge current.",

author = "Bulent Cakmak and Penty, {Richard V.} and White, {Ian H.}",

year = "2001",

month = dec,

day = "1",

language = "English",

note = "4th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 15-07-2001 Through 19-07-2001",

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TY - CONF

T1 - Surface assessment of a chemically assisted ion beam etched InP sample using scanning electron microscopy and atomic force microscopy techniques

AU - Cakmak, Bulent

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The chemically assisted ion beam etching (CAIBE) of InP material was reported. It was shown that surface morphology of InP-based structures improved significantly by use of CAIBE in a H2 atmosphere. The best surface quality was obtained using only Ar/H2 gases at 800V acceleration voltage. A maximum etch rate of 725 Å/min was obtained at 30° ion incidence angle for 2 kV acceleration voltage and 45mA discharge current.

AB - The chemically assisted ion beam etching (CAIBE) of InP material was reported. It was shown that surface morphology of InP-based structures improved significantly by use of CAIBE in a H2 atmosphere. The best surface quality was obtained using only Ar/H2 gases at 800V acceleration voltage. A maximum etch rate of 725 Å/min was obtained at 30° ion incidence angle for 2 kV acceleration voltage and 45mA discharge current.

UR - http://www.scopus.com/inward/record.url?scp=0035685082&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035685082

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Surface assessment of a chemically assisted ion beam etched InP sample using scanning electron microscopy and atomic force microscopy techniques

Abstract

Conference

ASJC Scopus subject areas

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