Superradiant emission in semiconductor diode laser structures

Peter P. Vasil'Ev, Richard V. Penty, Ian H. White

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed.

Original languageEnglish
Article number6381433
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume19
Issue number4
Early online date13 Dec 2012
DOIs
Publication statusPublished - 31 Jul 2013

Keywords

  • Semiconductor lasers
  • superradiance (SR)
  • ultrashort pulses

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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