Superradiant emission in semiconductor diode laser structures

Peter P. Vasil'Ev; Richard V. Penty; Ian H. White

doi:10.1109/JSTQE.2012.2234085

Superradiant emission in semiconductor diode laser structures

Peter P. Vasil'Ev, Richard V. Penty, Ian H. White

Vice Chancellor's Office

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10 Citations (SciVal)

Abstract

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed.

Original language	English
Article number	6381433
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	19
Issue number	4
Early online date	13 Dec 2012
DOIs	https://doi.org/10.1109/JSTQE.2012.2234085
Publication status	Published - 31 Jul 2013

Keywords

Semiconductor lasers
superradiance (SR)
ultrashort pulses

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2012.2234085

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KW - ultrashort pulses

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Superradiant emission in semiconductor diode laser structures

Abstract

Keywords

ASJC Scopus subject areas

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