Abstract

A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 mum or less;a second layer having a thickness of no less than 0.5 mum and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80°C; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material.
Original languageEnglish
Patent numberWO 2013/087704 (A1) - US2014332934- GB2497663
Priority date16/12/11
Filing date12/12/12
Publication statusPublished - 2019

Cite this

Timothy Peter, M., Jiang, Q., Bowen, C., Allsopp, D., & Edwards, M. (2019). SUBSTRATES FOR SEMICONDUCTOR DEVICES. (Patent No. WO 2013/087704 (A1) - US2014332934- GB2497663).

SUBSTRATES FOR SEMICONDUCTOR DEVICES. / Timothy Peter, Mollart (Inventor); Jiang, Quanzhong (Inventor); Bowen, Christopher (Inventor); Allsopp, Duncan (Inventor); Edwards, Michael (Inventor).

Patent No.: WO 2013/087704 (A1) - US2014332934- GB2497663. Dec 12, 2012.

Research output: Patent

Timothy Peter, M, Jiang, Q, Bowen, C, Allsopp, D & Edwards, M Dec. 12 2012, SUBSTRATES FOR SEMICONDUCTOR DEVICES, Patent No. WO 2013/087704 (A1) - US2014332934- GB2497663.
Timothy Peter M, Jiang Q, Bowen C, Allsopp D, Edwards M, inventors. SUBSTRATES FOR SEMICONDUCTOR DEVICES. WO 2013/087704 (A1) - US2014332934- GB2497663. 2019.
Timothy Peter, Mollart (Inventor) ; Jiang, Quanzhong (Inventor) ; Bowen, Christopher (Inventor) ; Allsopp, Duncan (Inventor) ; Edwards, Michael (Inventor). / SUBSTRATES FOR SEMICONDUCTOR DEVICES. Patent No.: WO 2013/087704 (A1) - US2014332934- GB2497663. Dec 12, 2012.
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abstract = "A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 mum or less;a second layer having a thickness of no less than 0.5 mum and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80°C; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material.",
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AB - A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 mum or less;a second layer having a thickness of no less than 0.5 mum and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80°C; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material.

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