Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

R Harding; G Davies; P G Coleman; C P Burrows; J Wong-Leung

doi:10.1016/j.physb.2003.09.152

Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

R Harding
, G Davies
, P G Coleman
, C P Burrows
, J Wong-Leung

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

Abstract

We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012–1014 cm−2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.

Original language	English
Pages (from-to)	738-742
Number of pages	5
Journal	Physica B Condensed Matter
Volume	340
DOIs	https://doi.org/10.1016/j.physb.2003.09.152
Publication status	Published - 2003

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ID number: ISI:000188300200153

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10.1016/j.physb.2003.09.152

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title = "Study of defects in ion-implanted silicon using photoluminescence and positron annihilation",

abstract = "We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012{\textendash}1014 cm−2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique. ",

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doi = "10.1016/j.physb.2003.09.152",

language = "English",

volume = "340",

pages = "738--742",

journal = "Physica B Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

AU - Harding, R

AU - Davies, G

AU - Coleman, P G

AU - Burrows, C P

AU - Wong-Leung, J

N1 - ID number: ISI:000188300200153

PY - 2003

Y1 - 2003

N2 - We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012–1014 cm−2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.

AB - We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012–1014 cm−2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.

U2 - 10.1016/j.physb.2003.09.152

DO - 10.1016/j.physb.2003.09.152

M3 - Article

SN - 0921-4526

VL - 340

SP - 738

EP - 742

JO - Physica B Condensed Matter

JF - Physica B Condensed Matter

ER -

Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Abstract

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