Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

R Harding, G Davies, P G Coleman, C P Burrows, J Wong-Leung

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)738-742
Number of pages5
JournalPhysica B Condensed Matter
Volume340
Publication statusPublished - 2003

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