Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

R Harding, G Davies, P G Coleman, C P Burrows, J Wong-Leung

Research output: Contribution to journal › Article › peer-review

5 Citations (SciVal)

ID number: ISI:000188300200153

Cite this

@article{24fb9bee2edf4a17a3b86e57f1e213b2,

title = "Study of defects in ion-implanted silicon using photoluminescence and positron annihilation",

author = "R Harding and G Davies and Coleman, {P G} and Burrows, {C P} and J Wong-Leung",

note = "ID number: ISI:000188300200153",

year = "2003",

language = "English",

volume = "340",

pages = "738--742",

journal = "Physica B Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

AU - Harding, R

AU - Davies, G

AU - Coleman, P G

AU - Burrows, C P

AU - Wong-Leung, J

N1 - ID number: ISI:000188300200153

PY - 2003

Y1 - 2003

M3 - Article

SN - 0921-4526

VL - 340

SP - 738

EP - 742

JO - Physica B Condensed Matter

JF - Physica B Condensed Matter

ER -