Structure of GaSb layers grown on (111) GaAs surfaces

The structure of GaSb layers grown on (111) GaAs substrate were studied using x-ray diffraction. The GaSb layers were grown by metal-organic vapor phase epitaxy, with thicknesses of 70 Å, 160 Å and 1260 Å. The lattice mismatch between the layer and the substrate was large and most of the misfit strain was taken up by a regular network of dislocations localized at the interfaces between GaSb and GaAs. The result shows that the structure of GaAs substrate was a single fcc domain.