Structure of GaSb layers grown on (111) GaAs surfaces

A.Yu. Babkevich, R.A. Cowley, N.J. Mason, P.A. Shields, T. Stadelman, S. Brown, D. Mannix, D. Paul

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The structure of GaSb layers grown on (111) GaAs substrate were studied using x-ray diffraction. The GaSb layers were grown by metal-organic vapor phase epitaxy, with thicknesses of 70 Å, 160 Å and 1260 Å. The lattice mismatch between the layer and the substrate was large and most of the misfit strain was taken up by a regular network of dislocations localized at the interfaces between GaSb and GaAs. The result shows that the structure of GaAs substrate was a single fcc domain.
Original languageEnglish
Pages (from-to)3012-3019
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
Publication statusPublished - 2004

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