Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

C. Trager-Cowan; A. Alasamari; W. Avis; J. Bruckbauer; P. R. Edwards; G. Ferenczi; B. Hourahine; A. Kotzai; S. Kraeusel; G. Kusch; R. W. Martin; R. McDermott; G. Naresh-Kumar; M. Nouf-Allehiani; E. Pascal; David Thomson; S. Vespucci; M. D. Smith; P. J. Parbrook; J. Enslin; F. Mehnke; C. Kuhn; T. Wernicke; M. Kneissl; S. Hagedorn; A. Knauer; S. Walde; M. Weyers; P. M. Coulon; P. A. Shields; J. Bai; Y. Gong; L. Jiu; Y. Zhang; R. M. Smith; T. Wang; A. Winkelmann

doi:10.1088/1361-6641/ab75a5

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

C. Trager-Cowan, A. Alasamari, W. Avis, J. Bruckbauer, P. R. Edwards, G. Ferenczi, B. Hourahine, A. Kotzai, S. Kraeusel, G. Kusch, R. W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, David Thomson, S. Vespucci, M. D. Smith, P. J. Parbrook, J. EnslinF. Mehnke, C. Kuhn, T. Wernicke, M. Kneissl, S. Hagedorn, A. Knauer, S. Walde, M. Weyers, P. M. Coulon, P. A. Shields, J. Bai, Y. Gong, L. Jiu, Y. Zhang, R. M. Smith, T. Wang, A. Winkelmann

Research output: Contribution to journal › Article › peer-review

9 Citations (SciVal)

Abstract

The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.

Original language	English
Article number	054001
Journal	Semiconductor Science and Technology
Volume	35
Issue number	5
Early online date	12 Feb 2020
DOIs	https://doi.org/10.1088/1361-6641/ab75a5
Publication status	Published - 25 Mar 2020

Funding

The authors would like to acknowledge financial support of the EPSRC, UK via Grant No. EP/J015792/1, 'Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC'; Grant No. EP/M015181/1, 'Manufacturing nano-engineered III-nitrides'; and Grant No. EP/P015719/1, 'Quantitative non-destructive nanoscale characterisation of advanced materials'. Work at FerdinandBraun-Institute and TU Berlin was partially supported by the German Research Council (DFG) within the CRC 787 (Nanophotonics) and the German Federal Ministry of Research and Education within the Advanced UV for Life project consortium.

Keywords

CL
EBSD
ECCI
extended defects
nitride
SEM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/1361-6641/ab75a5Licence: CC BY

Cite this

Trager-Cowan, C., Alasamari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Ferenczi, G., Hourahine, B., Kotzai, A., Kraeusel, S., Kusch, G., Martin, R. W., McDermott, R., Naresh-Kumar, G., Nouf-Allehiani, M., Pascal, E., Thomson, D., Vespucci, S., Smith, M. D., Parbrook, P. J., ... Winkelmann, A. (2020). Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology, 35(5), Article 054001. https://doi.org/10.1088/1361-6641/ab75a5

Trager-Cowan, C, Alasamari, A, Avis, W, Bruckbauer, J, Edwards, PR, Ferenczi, G, Hourahine, B, Kotzai, A, Kraeusel, S, Kusch, G, Martin, RW, McDermott, R, Naresh-Kumar, G, Nouf-Allehiani, M, Pascal, E, Thomson, D, Vespucci, S, Smith, MD, Parbrook, PJ, Enslin, J, Mehnke, F, Kuhn, C, Wernicke, T, Kneissl, M, Hagedorn, S, Knauer, A, Walde, S, Weyers, M, Coulon, PM, Shields, PA, Bai, J, Gong, Y, Jiu, L, Zhang, Y, Smith, RM, Wang, T & Winkelmann, A 2020, 'Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope', Semiconductor Science and Technology, vol. 35, no. 5, 054001. https://doi.org/10.1088/1361-6641/ab75a5

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abstract = "The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a material's light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires.",

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AU - Alasamari, A.

AU - Avis, W.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Ferenczi, G.

AU - Hourahine, B.

AU - Kotzai, A.

AU - Kraeusel, S.

AU - Kusch, G.

AU - Martin, R. W.

AU - McDermott, R.

AU - Naresh-Kumar, G.

AU - Nouf-Allehiani, M.

AU - Pascal, E.

AU - Thomson, David

AU - Vespucci, S.

AU - Smith, M. D.

AU - Parbrook, P. J.

AU - Enslin, J.

AU - Mehnke, F.

AU - Kuhn, C.

AU - Wernicke, T.

AU - Kneissl, M.

AU - Hagedorn, S.

AU - Knauer, A.

AU - Walde, S.

AU - Weyers, M.

AU - Coulon, P. M.

AU - Shields, P. A.

AU - Bai, J.

AU - Gong, Y.

AU - Jiu, L.

AU - Zhang, Y.

AU - Smith, R. M.

AU - Wang, T.

AU - Winkelmann, A.

PY - 2020/3/25

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Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Abstract

Funding

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Manufacturing of Nano-Engineered III-N Semiconductors

Cite this

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Abstract

Funding

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

Cite this