Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

J Diener; D Kovalev; H Heckler; G Polisski; N Kunzner; F Koch; A L Efros; M Rosen

doi:10.1016/S0925-3467(01)00036-2

Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

J Diener
, D Kovalev
, H Heckler
, G Polisski
, N Kunzner
, F Koch
, A L Efros
, M Rosen

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (SciVal)

Abstract

We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	135-139
Number of pages	5
Journal	Optical Materials
Volume	17 Jun-Jul
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00036-2
Publication status	Published - 2001

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ID number: ISI:000169788700031

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10.1016/S0925-3467(01)00036-2

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title = "Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals",

abstract = "We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.",

author = "J Diener and D Kovalev and H Heckler and G Polisski and N Kunzner and F Koch and Efros, \{A L\} and M Rosen",

note = "ID number: ISI:000169788700031",

year = "2001",

doi = "10.1016/S0925-3467(01)00036-2",

language = "English",

volume = "17 Jun-Jul",

pages = "135--139",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

AU - Diener, J

AU - Kovalev, D

AU - Heckler, H

AU - Polisski, G

AU - Kunzner, N

AU - Koch, F

AU - Efros, A L

AU - Rosen, M

N1 - ID number: ISI:000169788700031

PY - 2001

Y1 - 2001

N2 - We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.

AB - We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.

U2 - 10.1016/S0925-3467(01)00036-2

DO - 10.1016/S0925-3467(01)00036-2

M3 - Article

SN - 0925-3467

VL - 17 Jun-Jul

SP - 135

EP - 139

JO - Optical Materials

JF - Optical Materials

IS - 1-2

ER -

Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

Abstract

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