Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

J Diener, D Kovalev, H Heckler, G Polisski, N Kunzner, F Koch, A L Efros, M Rosen

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Abstract

We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence= UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals and Anger ejection of a carrier into the smaller one, with the larger band-gap. (C) 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)135-139
Number of pages5
JournalOptical Materials
Volume17 Jun-Jul
Issue number1-2
Publication statusPublished - 2001

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    Diener, J., Kovalev, D., Heckler, H., Polisski, G., Kunzner, N., Koch, F., Efros, A. L., & Rosen, M. (2001). Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals. Optical Materials, 17 Jun-Jul(1-2), 135-139.