Strong in-plane birefringence of spatially nanostructured silicon

D Kovalev, G Polisski, J Diener, H Heckler, N Kunzner, V Y Timoshenko, F Koch

Research output: Contribution to journalArticle

110 Citations (Scopus)

Abstract

We report on a strong intrinsic optical anisotropy of Si induced by its dielectric patterning. As a result, an in-plane birefringence for nanostructured (110) Si surfaces is found to be 10(4) times stronger than that observed in bulk silicon crystals. We found the value of birefringence to be strongly dependent on the dielectric surrounding of the silicon nanoparticles assembling these layers. Beyond numerous potential implications for realization of optical devices and sensors, this gives a favorable route for studying the physics of condensation phenomena in a mesoscopic geometrical scale. (C) 2001 American Institute of Physics.
Original languageEnglish
Pages (from-to)916-918
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
Publication statusPublished - 2001

Fingerprint Dive into the research topics of 'Strong in-plane birefringence of spatially nanostructured silicon'. Together they form a unique fingerprint.

Cite this