Stress-dependent local oxidation of silicon

Jonathan Evans, John King

Research output: Contribution to journalArticlepeer-review

1 Citation (SciVal)
124 Downloads (Pure)


The two-dimensional isolation oxidation of silicon is considered for stress-dependent reaction and diffusion coefficients. The influence of such parameters is investigated numerically and asymptotically in the bird's beak problem and for curved geometries arising in the oxidation of cylindrical and spherical structures. In the bird's beak problem, the limit of large activation volume is described for a stress-dependent reaction coefficient, illustrating the significant growth retardation of the silicon/silicon oxide interface and reduced stresses in the silicon oxide. Novel high-order nonlinear evolution-type PDEs are derived and investigated using asymptotic and numerical techniques.
Original languageEnglish
Pages (from-to)2012–2039
Number of pages28
JournalSIAM Journal on Applied Mathematics
Issue number6
Early online date16 Nov 2017
Publication statusPublished - 31 Dec 2017


Dive into the research topics of 'Stress-dependent local oxidation of silicon'. Together they form a unique fingerprint.

Cite this