Strain-induced modifications of transport in gated graphene nanoribbons

Diana A. Cosma, Marcin Mucha-Kruczynski, Henning Schomerus, Vladimir I. Fal'ko

Research output: Contribution to journalArticle

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Abstract

We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-Pérot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n = 0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.
Original languageEnglish
Article number245409
JournalPhysical Review B
Volume90
Issue number24
DOIs
Publication statusPublished - 3 Dec 2014

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Nanoribbons
Carbon Nanotubes
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Graphene
graphene
disorders
Ballistics
ballistics
valleys

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Strain-induced modifications of transport in gated graphene nanoribbons. / Cosma, Diana A.; Mucha-Kruczynski, Marcin; Schomerus, Henning; Fal'ko, Vladimir I.

In: Physical Review B, Vol. 90, No. 24, 245409, 03.12.2014.

Research output: Contribution to journalArticle

Cosma, Diana A. ; Mucha-Kruczynski, Marcin ; Schomerus, Henning ; Fal'ko, Vladimir I. / Strain-induced modifications of transport in gated graphene nanoribbons. In: Physical Review B. 2014 ; Vol. 90, No. 24.
@article{57e17b09ee8a453ea5a7cebc8a68500b,
title = "Strain-induced modifications of transport in gated graphene nanoribbons",
abstract = "We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-P{\'e}rot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n = 0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.",
author = "Cosma, {Diana A.} and Marcin Mucha-Kruczynski and Henning Schomerus and Fal'ko, {Vladimir I.}",
year = "2014",
month = "12",
day = "3",
doi = "10.1103/PhysRevB.90.245409",
language = "English",
volume = "90",
journal = "Physical Review B : Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

TY - JOUR

T1 - Strain-induced modifications of transport in gated graphene nanoribbons

AU - Cosma, Diana A.

AU - Mucha-Kruczynski, Marcin

AU - Schomerus, Henning

AU - Fal'ko, Vladimir I.

PY - 2014/12/3

Y1 - 2014/12/3

N2 - We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-Pérot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n = 0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.

AB - We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-Pérot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n = 0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.

UR - http://arxiv.org/abs/1409.6666

UR - http://dx.doi.org/10.1103/PhysRevB.90.245409

U2 - 10.1103/PhysRevB.90.245409

DO - 10.1103/PhysRevB.90.245409

M3 - Article

VL - 90

JO - Physical Review B : Condensed Matter and Materials Physics

JF - Physical Review B : Condensed Matter and Materials Physics

SN - 1098-0121

IS - 24

M1 - 245409

ER -