Projects per year
Abstract
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence, and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.
Original language | English |
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Article number | 084307 |
Number of pages | 9 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 8 |
Early online date | 27 Aug 2013 |
DOIs | |
Publication status | Published - 28 Aug 2013 |
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Dive into the research topics of 'Strain evolution in GaN nanowires: From free-surface objects to coalesced templates'. Together they form a unique fingerprint.Projects
- 2 Finished
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Thermal Substrate: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
Allsopp, D. (PI) & Wang, W. (CoI)
Engineering and Physical Sciences Research Council
1/05/13 → 31/10/16
Project: Research council
Equipment
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MC2-Electron Microscopy (EM)
Material and Chemical Characterisation (MC2)Facility/equipment: Technology type
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MC2- X-ray diffraction (XRD)
Material and Chemical Characterisation (MC2)Facility/equipment: Technology type