Strain evolution in GaN nanowires: From free-surface objects to coalesced templates

M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf Der Maur, M. Cooke, M. Dineen, A. Di Carlo, D. W. E. Allsopp, J. Zúñiga-pérez

Research output: Contribution to journalArticlepeer-review

55 Citations (SciVal)
221 Downloads (Pure)


Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and photoluminescence techniques have been used to obtain the strain profile inside the nanowires from their base to their top facet for both initial compressive and tensile strains. The relaxation behaviors derived from optical and structural characterizations perfectly match the numerical results of calculations based on a continuous media approach. By monitoring the elastic relaxation enabled by the lateral free-surfaces, the height from which the nanowires can be considered strain-free has been estimated. Based on this result, NWs sufficiently high to be strain-free have been coalesced to form a continuous GaN layer. X-ray diffraction, photoluminescence, and cathodoluminescence clearly show that despite the initial strain-free nanowires template, the final GaN layer is strained.
Original languageEnglish
Article number084307
Number of pages9
JournalJournal of Applied Physics
Issue number8
Early online date27 Aug 2013
Publication statusPublished - 28 Aug 2013


Dive into the research topics of 'Strain evolution in GaN nanowires: From free-surface objects to coalesced templates'. Together they form a unique fingerprint.

Cite this