Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

A. Asenov; G. Slavcheva; A. R. Brown; R. Balasubramaniam; J. H. Davies

doi:10.1006/spmi.1999.0805

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

A. Asenov, G. Slavcheva, A. R. Brown, R. Balasubramaniam, J. H. Davies

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

229 Downloads (Pure)

Original language	English
Pages (from-to)	215-227
Journal	Superlattices and Microstructures
Volume	27
Issue number	2-3
DOIs	https://doi.org/10.1006/spmi.1999.0805
Publication status	Published - Feb 2000

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superlat_micr_2000Submitted manuscript, 503 KB

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title = "Statistical 3D {\textquoteleft}atomistic{\textquoteright} simulation of decanano MOSFETs",

author = "A. Asenov and G. Slavcheva and Brown, {A. R.} and R. Balasubramaniam and Davies, {J. H.}",

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doi = "10.1006/spmi.1999.0805",

language = "English",

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journal = "Superlattices and Microstructures",

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T1 - Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

AU - Asenov, A.

AU - Slavcheva, G.

AU - Brown, A. R.

AU - Balasubramaniam, R.

AU - Davies, J. H.

PY - 2000/2

Y1 - 2000/2

UR - http://dx.doi.org/10.1006/spmi.1999.0805

U2 - 10.1006/spmi.1999.0805

DO - 10.1006/spmi.1999.0805

M3 - Article

SN - 0749-6036

VL - 27

SP - 215

EP - 227

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2-3

ER -

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

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