Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

Y Niida, Kei Takashina, A Fujiwara, T Fujisawa, Y Hirayama

Research output: Contribution to journalArticle

1 Citation (Scopus)
101 Downloads (Pure)

Abstract

We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias
Original languageEnglish
Article number142101
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
Publication statusPublished - 2009

Fingerprint

valleys
quantum wells
magnetic fields
electrons
occupation
proportion
conduction bands
conductivity
products

Cite this

Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. / Niida, Y; Takashina, Kei; Fujiwara, A; Fujisawa, T; Hirayama, Y.

In: Applied Physics Letters, Vol. 94, No. 14, 142101, 2009.

Research output: Contribution to journalArticle

@article{f80f82a7c39941eb9e7826a57028d858,
title = "Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field",
abstract = "We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias",
author = "Y Niida and Kei Takashina and A Fujiwara and T Fujisawa and Y Hirayama",
year = "2009",
doi = "10.1063/1.3105987",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP Publishing",
number = "14",

}

TY - JOUR

T1 - Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

AU - Niida, Y

AU - Takashina, Kei

AU - Fujiwara, A

AU - Fujisawa, T

AU - Hirayama, Y

PY - 2009

Y1 - 2009

N2 - We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

AB - We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

UR - http://www.scopus.com/inward/record.url?scp=64349108337&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1063/1.3105987

U2 - 10.1063/1.3105987

DO - 10.1063/1.3105987

M3 - Article

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142101

ER -