Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

Y Niida; Kei Takashina; A Fujiwara; T Fujisawa; Y Hirayama

doi:10.1063/1.3105987

Spin splitting of upper electron subbands in a SiO₂/Si(100)/SiO₂ quantum well with in-plane magnetic field

Y Niida, Kei Takashina, A Fujiwara, T Fujisawa, Y Hirayama

Department of Physics

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Abstract

We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

Original language	English
Article number	142101
Journal	Applied Physics Letters
Volume	94
Issue number	14
DOIs	https://doi.org/10.1063/1.3105987
Publication status	Published - 2009

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APL94_2009_Takashina_et_al.pdf
©2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101, and may be found at http://dx.doi.org/10.1063/1.3105987.

Cite this

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title = "Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field",

abstract = "We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias",

author = "Y Niida and Kei Takashina and A Fujiwara and T Fujisawa and Y Hirayama",

year = "2009",

doi = "10.1063/1.3105987",

language = "English",

volume = "94",

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T1 - Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

AU - Niida, Y

AU - Takashina, Kei

AU - Fujiwara, A

AU - Fujisawa, T

AU - Hirayama, Y

PY - 2009

Y1 - 2009

N2 - We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

AB - We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias

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DO - 10.1063/1.3105987

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Spin splitting of upper electron subbands in a SiO₂/Si(100)/SiO₂ quantum well with in-plane magnetic field

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