Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

Y Niida, Kei Takashina, A Fujiwara, T Fujisawa, Y Hirayama

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Abstract

We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g∗m∗ to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias
Original languageEnglish
Article number142101
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
Publication statusPublished - 2009

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