Spin-flip Raman studies of a ZnSe/Zn1-xMnxSe multiple quantum well structure

P. J. Boyce; D. Wolverson; J. J. Davies; W. Heimbrodt

Spin-flip Raman studies of a ZnSe/Zn_1-xMn_xSe multiple quantum well structure

P. J. Boyce, D. Wolverson, J. J. Davies, W. Heimbrodt

University of East Anglia

Research output: Contribution to journal › Conference article › peer-review

Abstract

A study of spin-flip Raman scattering in a ZnSe / Zn_0.74Mn_0.26Se heterostructure is described; a single spin-flip Raman band is observed with a Raman shift of 18.0 cm^-1 at 6 Tesla and 1.6 K. A simple envelope function model predicts a Raman shift of 17.8 cm^-1 for a value of the conduction band offset of 80 meV at this manganese concentration, consistent with earlier studies.

Original language	English
Pages (from-to)	455-458
Number of pages	4
Journal	Materials Science Forum
Volume	182-184
Publication status	Published - 1 Jan 1995
Event	Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria Duration: 26 Sept 1994 → 28 Sept 1994

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Spin-flip Raman studies of a ZnSe/Zn1-xMnxSe multiple quantum well structure",

abstract = "A study of spin-flip Raman scattering in a ZnSe / Zn0.74Mn0.26Se heterostructure is described; a single spin-flip Raman band is observed with a Raman shift of 18.0 cm-1 at 6 Tesla and 1.6 K. A simple envelope function model predicts a Raman shift of 17.8 cm-1 for a value of the conduction band offset of 80 meV at this manganese concentration, consistent with earlier studies.",

author = "Boyce, \{P. J.\} and D. Wolverson and Davies, \{J. J.\} and W. Heimbrodt",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "182-184",

pages = "455--458",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

note = "Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors ; Conference date: 26-09-1994 Through 28-09-1994",

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TY - JOUR

T1 - Spin-flip Raman studies of a ZnSe/Zn1-xMnxSe multiple quantum well structure

AU - Boyce, P. J.

AU - Wolverson, D.

AU - Davies, J. J.

AU - Heimbrodt, W.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A study of spin-flip Raman scattering in a ZnSe / Zn0.74Mn0.26Se heterostructure is described; a single spin-flip Raman band is observed with a Raman shift of 18.0 cm-1 at 6 Tesla and 1.6 K. A simple envelope function model predicts a Raman shift of 17.8 cm-1 for a value of the conduction band offset of 80 meV at this manganese concentration, consistent with earlier studies.

AB - A study of spin-flip Raman scattering in a ZnSe / Zn0.74Mn0.26Se heterostructure is described; a single spin-flip Raman band is observed with a Raman shift of 18.0 cm-1 at 6 Tesla and 1.6 K. A simple envelope function model predicts a Raman shift of 17.8 cm-1 for a value of the conduction band offset of 80 meV at this manganese concentration, consistent with earlier studies.

UR - https://www.scopus.com/pages/publications/0029228014

M3 - Conference article

AN - SCOPUS:0029228014

SN - 0255-5476

VL - 182-184

SP - 455

EP - 458

JO - Materials Science Forum

JF - Materials Science Forum

T2 - Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors

Y2 - 26 September 1994 through 28 September 1994

ER -

Spin-flip Raman studies of a ZnSe/Zn_1-xMn_xSe multiple quantum well structure

Abstract

ASJC Scopus subject areas

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