Spin-flip Raman studies of a ZnSe/Zn1-xMnxSe multiple quantum well structure

P. J. Boyce, D. Wolverson, J. J. Davies, W. Heimbrodt

Research output: Contribution to journalConference articlepeer-review


A study of spin-flip Raman scattering in a ZnSe / Zn0.74Mn0.26Se heterostructure is described; a single spin-flip Raman band is observed with a Raman shift of 18.0 cm-1 at 6 Tesla and 1.6 K. A simple envelope function model predicts a Raman shift of 17.8 cm-1 for a value of the conduction band offset of 80 meV at this manganese concentration, consistent with earlier studies.

Original languageEnglish
Pages (from-to)455-458
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 1 Jan 1995
EventProceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria
Duration: 26 Sept 199428 Sept 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Spin-flip Raman studies of a ZnSe/Zn1-xMnxSe multiple quantum well structure'. Together they form a unique fingerprint.

Cite this