Spin flip Raman spectroscopy on heavily doped ZnMnSe layers

M. Lentze, L. Smith, D. Wolverson, P. Grabs, J. Geurts, L. Molenkamp

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The influence of carrier concentration on electronic spin flip transitions in the conduction band of heavily doped diluted magnetic semiconductors is analysed experimentally by spin flip Raman spectroscopy (SFRS). Bulk-like (Zn,Mn)Se epitaxial layers with electron concentrations between n = 10 16 cm-3 and n = 1019 cm-3 are investigated. Spin flip Raman signals appear in samples with doping concentration up to 1018 cm-3, i.e., near the insulator-to-metal transition. Varying the doping level we observe a systematic broadening of SFRS linewidth with increasing electron concentration. Furthermore, the linewidth in backward scattering geometry is significantly higher than in forward scattering. Following theoretical predictions for doped samples, from this behaviour the values of spin diffusion coefficient Ds and spin relaxation time T2 are deduced.

Original languageEnglish
Pages (from-to)1118-1121
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number4
DOIs
Publication statusPublished - 8 May 2006
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 12 Sep 200516 Sep 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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