Spin flip Raman spectroscopy on heavily doped ZnMnSe layers

M. Lentze; L. Smith; D. Wolverson; P. Grabs; J. Geurts; L. Molenkamp

doi:10.1002/pssc.200564707

Spin flip Raman spectroscopy on heavily doped ZnMnSe layers

M. Lentze, L. Smith, D. Wolverson, P. Grabs, J. Geurts, L. Molenkamp

Universitât Würzburg

Research output: Contribution to journal › Conference article › peer-review

1 Citation (SciVal)

Abstract

The influence of carrier concentration on electronic spin flip transitions in the conduction band of heavily doped diluted magnetic semiconductors is analysed experimentally by spin flip Raman spectroscopy (SFRS). Bulk-like (Zn,Mn)Se epitaxial layers with electron concentrations between n = 10 ¹⁶ cm^-3 and n = 10¹⁹ cm^-3 are investigated. Spin flip Raman signals appear in samples with doping concentration up to 1018 cm^-3, i.e., near the insulator-to-metal transition. Varying the doping level we observe a systematic broadening of SFRS linewidth with increasing electron concentration. Furthermore, the linewidth in backward scattering geometry is significantly higher than in forward scattering. Following theoretical predictions for doped samples, from this behaviour the values of spin diffusion coefficient D_s and spin relaxation time T₂ are deduced.

Original language	English
Pages (from-to)	1118-1121
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200564707
Publication status	Published - 8 May 2006
Event	12th International Conference on II-VI Compounds - Warsaw, Poland Duration: 12 Sept 2005 → 16 Sept 2005

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200564707

Cite this

@article{3b742a80c64a4daca9325ad96b7c49ff,

title = "Spin flip Raman spectroscopy on heavily doped ZnMnSe layers",

abstract = "The influence of carrier concentration on electronic spin flip transitions in the conduction band of heavily doped diluted magnetic semiconductors is analysed experimentally by spin flip Raman spectroscopy (SFRS). Bulk-like (Zn,Mn)Se epitaxial layers with electron concentrations between n = 10 16 cm-3 and n = 1019 cm-3 are investigated. Spin flip Raman signals appear in samples with doping concentration up to 1018 cm-3, i.e., near the insulator-to-metal transition. Varying the doping level we observe a systematic broadening of SFRS linewidth with increasing electron concentration. Furthermore, the linewidth in backward scattering geometry is significantly higher than in forward scattering. Following theoretical predictions for doped samples, from this behaviour the values of spin diffusion coefficient Ds and spin relaxation time T2 are deduced.",

author = "M. Lentze and L. Smith and D. Wolverson and P. Grabs and J. Geurts and L. Molenkamp",

year = "2006",

month = may,

day = "8",

doi = "10.1002/pssc.200564707",

language = "English",

volume = "3",

pages = "1118--1121",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "4",

note = "12th International Conference on II-VI Compounds ; Conference date: 12-09-2005 Through 16-09-2005",

}

TY - JOUR

T1 - Spin flip Raman spectroscopy on heavily doped ZnMnSe layers

AU - Lentze, M.

AU - Smith, L.

AU - Wolverson, D.

AU - Grabs, P.

AU - Geurts, J.

AU - Molenkamp, L.

PY - 2006/5/8

Y1 - 2006/5/8

N2 - The influence of carrier concentration on electronic spin flip transitions in the conduction band of heavily doped diluted magnetic semiconductors is analysed experimentally by spin flip Raman spectroscopy (SFRS). Bulk-like (Zn,Mn)Se epitaxial layers with electron concentrations between n = 10 16 cm-3 and n = 1019 cm-3 are investigated. Spin flip Raman signals appear in samples with doping concentration up to 1018 cm-3, i.e., near the insulator-to-metal transition. Varying the doping level we observe a systematic broadening of SFRS linewidth with increasing electron concentration. Furthermore, the linewidth in backward scattering geometry is significantly higher than in forward scattering. Following theoretical predictions for doped samples, from this behaviour the values of spin diffusion coefficient Ds and spin relaxation time T2 are deduced.

AB - The influence of carrier concentration on electronic spin flip transitions in the conduction band of heavily doped diluted magnetic semiconductors is analysed experimentally by spin flip Raman spectroscopy (SFRS). Bulk-like (Zn,Mn)Se epitaxial layers with electron concentrations between n = 10 16 cm-3 and n = 1019 cm-3 are investigated. Spin flip Raman signals appear in samples with doping concentration up to 1018 cm-3, i.e., near the insulator-to-metal transition. Varying the doping level we observe a systematic broadening of SFRS linewidth with increasing electron concentration. Furthermore, the linewidth in backward scattering geometry is significantly higher than in forward scattering. Following theoretical predictions for doped samples, from this behaviour the values of spin diffusion coefficient Ds and spin relaxation time T2 are deduced.

UR - http://www.scopus.com/inward/record.url?scp=33646197056&partnerID=8YFLogxK

U2 - 10.1002/pssc.200564707

DO - 10.1002/pssc.200564707

M3 - Conference article

AN - SCOPUS:33646197056

SN - 1610-1634

VL - 3

SP - 1118

EP - 1121

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 4

T2 - 12th International Conference on II-VI Compounds

Y2 - 12 September 2005 through 16 September 2005

ER -

Spin flip Raman spectroscopy on heavily doped ZnMnSe layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this