Spin-flip Raman scattering studies of ZnSe bulk crystals doped with antimony

J J Davies, D Wolverson, G N Aliev, S Zeng, J F Wang, M Isshiki

Research output: Contribution to journal › Article › peer-review

4 Citations (SciVal)

Original language	English
Pages (from-to)	978-982
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	18
Issue number	11
Publication status	Published - 2003

ID number: ISI:000186862200013

Cite this

@article{92e522dfa7714cc8a48383910b5f8a28,

title = "Spin-flip Raman scattering studies of ZnSe bulk crystals doped with antimony",

author = "Davies, {J J} and D Wolverson and Aliev, {G N} and S Zeng and Wang, {J F} and M Isshiki",

note = "ID number: ISI:000186862200013",

year = "2003",

language = "English",

volume = "18",

pages = "978--982",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "11",

}

TY - JOUR

T1 - Spin-flip Raman scattering studies of ZnSe bulk crystals doped with antimony

AU - Davies, J J

AU - Wolverson, D

AU - Aliev, G N

AU - Zeng, S

AU - Wang, J F

AU - Isshiki, M

N1 - ID number: ISI:000186862200013

PY - 2003

Y1 - 2003

M3 - Article

SN - 0268-1242

VL - 18

SP - 978

EP - 982

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -