Spin-flip Raman scattering spectroscopy has been applied to the study of the wide band-gap semiconductor materials (Formula presented) and (Formula presented) in order to determine the dependence on the composition, x, of the gyromagnetic ratio of electrons in the (Formula presented) conduction band and, thereby, to obtain a better understanding of the parameters underlying the band structure of these materials. The measured values are discussed in terms of the (Formula presented) perturbation theory for the band structure near the direct band gap, at different levels of approximation, and it is found that the observed dependence on composition can be reproduced well by the use of suitable interpolation schemes between the binary end members of the range of materials. Preliminary results for the related quaternary material (Formula presented) are discussed within the same model.
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 15 Nov 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics