Spin-flip Raman scattering of holes bound to acceptors in p-type nitrogen-doped zinc selenide

Christopher M. Townsley, Bernhard Schlichtherle, Daniel Wolverson, J. John Davies, Ken ichi Ogata, Shigeo Fujita

Research output: Contribution to journalArticle


Studies of spin-flip Raman scattering of holes bound to acceptors in a sample of nitrogen-doped epitaxial zinc selenide grown by metallo-organic vapour phase epitaxy are reported. The resonance behaviour of the spin-flip Raman signals is discussed. The observed spin-flip Raman shifts extrapolate to a splitting between light and heavy hole states of zero at zero magnetic field, suggesting that strain effects are negligible. Given this and assuming that diamagnetic shifts are negligible over the magnetic field range of the measurements, preliminary values for the g-values of the bound heavy and light holes in the [001] direction of g 3 2 = 0.82 and g 1 2 = 0.90 respectively are obtained.

Original languageEnglish
Pages (from-to)437-440
Number of pages4
JournalSolid State Communications
Issue number7
Publication statusPublished - Nov 1995

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this