Abstract
We have used spin-flip Raman scattering in magnetic fields up to 14 T to investigate g-factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a `dark' (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.
| Original language | English |
|---|---|
| Pages (from-to) | 911-914 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 273-274 |
| DOIs | |
| Publication status | Published - 15 Dec 1999 |
| Event | Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 26 Jul 1999 → 30 Jul 1999 |
Funding
We would like to thank V.F. Sapega, A.A. Toropov, and E.L. Ivchenko for helpful discussions. We acknowledge technical assistance by P. Hiessl, H. Hirt, M. Siemers, and R.C.J. Draper. This work was supported in part by EPSRC grant GR/L62283, RFBR and Volkswagen-Stiftung grants.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering