Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures

T. Ruf; O. Z. Karimov; D. Wolverson; J. J. Davies; A. N. Reznitsky; A. A. Klochikhin; S. Yu Verbin; L. N. Tenishev; S. A. Permogorov; S. V. Ivanov

doi:10.1016/S0921-4526(99)00552-9

Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures

T. Ruf, O. Z. Karimov, D. Wolverson, J. J. Davies, A. N. Reznitsky, A. A. Klochikhin, S. Yu Verbin, L. N. Tenishev, S. A. Permogorov, S. V. Ivanov

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

7 Citations (SciVal)

Abstract

We have used spin-flip Raman scattering in magnetic fields up to 14 T to investigate g-factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a `dark' (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.

Original language	English
Pages (from-to)	911-914
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00552-9
Publication status	Published - 15 Dec 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 26 Jul 1999 → 30 Jul 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00552-9

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@article{dd5462fc42944ce7857b9f01b119ab14,

title = "Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures",

abstract = "We have used spin-flip Raman scattering in magnetic fields up to 14 T to investigate g-factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a `dark' (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.",

author = "T. Ruf and Karimov, {O. Z.} and D. Wolverson and Davies, {J. J.} and Reznitsky, {A. N.} and Klochikhin, {A. A.} and Verbin, {S. Yu} and Tenishev, {L. N.} and Permogorov, {S. A.} and Ivanov, {S. V.}",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00552-9",

language = "English",

volume = "273-274",

pages = "911--914",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

}

TY - JOUR

T1 - Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures

AU - Ruf, T.

AU - Karimov, O. Z.

AU - Wolverson, D.

AU - Davies, J. J.

AU - Reznitsky, A. N.

AU - Klochikhin, A. A.

AU - Verbin, S. Yu

AU - Tenishev, L. N.

AU - Permogorov, S. A.

AU - Ivanov, S. V.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - We have used spin-flip Raman scattering in magnetic fields up to 14 T to investigate g-factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a `dark' (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.

AB - We have used spin-flip Raman scattering in magnetic fields up to 14 T to investigate g-factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a `dark' (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.

UR - http://www.scopus.com/inward/record.url?scp=0033324012&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00552-9

DO - 10.1016/S0921-4526(99)00552-9

M3 - Conference article

AN - SCOPUS:0033324012

SN - 0921-4526

VL - 273-274

SP - 911

EP - 914

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures

Abstract

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