Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures

T. Ruf, O. Z. Karimov, D. Wolverson, J. J. Davies, A. N. Reznitsky, A. A. Klochikhin, S. Yu Verbin, L. N. Tenishev, S. A. Permogorov, S. V. Ivanov

Research output: Contribution to journalConference articlepeer-review

7 Citations (SciVal)


We have used spin-flip Raman scattering in magnetic fields up to 14 T to investigate g-factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a `dark' (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.

Original languageEnglish
Pages (from-to)911-914
Number of pages4
JournalPhysica B: Condensed Matter
Publication statusPublished - 15 Dec 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: 26 Jul 199930 Jul 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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