Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide

The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.