Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide

P. J. Boyce, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu

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Abstract

The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.

Original languageEnglish
Pages (from-to)2063-2065
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number16
DOIs
Publication statusPublished - 1 Dec 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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