Abstract
The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45-55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers.
Original language | English |
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Pages (from-to) | 2063-2065 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1 Dec 1994 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)