Spin-flip Raman scattering by electrons bound to donors in CdTe/Cd1-xMnxTe multiple quantum well structures as a function of barrier composition

D. Wolverson, J. J. Davies, S. V. Railson, M. P. Halsall, D. E. Ashenford, B. Lunn

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Experimental and theoretical studies of the exchange-enhanced spin-flip Raman scattering from electrons bound to donors in a series of CdTe/Cd1-xMnxTe multiple quantum well structures have been carried out. In this series, the CdTe well width has been kept constant and the barrier Mn concentration has been varied from 1% to 12. In some samples two spin-flip Raman signals are observed, attributed to electrons located in the quantum wells, but bound to donors located either in the quantum wells or in the barriers adjacent to the wells. This work provides a new test of a model developed previously for these two signals; the results suggest that the conduction band offset in CdTe/Cd1-xMnxTe heterostructures is not a function of Mn concentration at low concentrations.

Original languageEnglish
Pages (from-to)656-660
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2 Apr 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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