Spin and valley polarization dependence of resistivity in two dimensions

K Takashina, Y Niida, V T Renard, B. A. Piot, David Tregurtha, A Fujiwara, Y Hirayama

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Abstract

We demonstrate that spin polarization and valley polarization have quantitatively similar effects on the resistivity of a two-dimensional electron gas in a silicon-on-insulator quantum well. In so doing, we also examine the dependence on disorder, leading to a coarse but global phenomenology of how the resistivity depends on its key parameters: spin and valley polarization, density, disorder, and temperature.
Original languageEnglish
Article number201301(R)
Number of pages5
JournalPhysical Review B
Volume88
Issue number20
DOIs
Publication statusPublished - 4 Nov 2013

Keywords

  • valley polarization
  • spin polarization
  • resistivity
  • valley
  • spin
  • silicon
  • 2 dimensions

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    Takashina, K., Niida, Y., Renard, V. T., Piot, B. A., Tregurtha, D., Fujiwara, A., & Hirayama, Y. (2013). Spin and valley polarization dependence of resistivity in two dimensions. Physical Review B, 88(20), [201301(R)]. https://doi.org/10.1103/PhysRevB.88.201301