Spectral dynamics of long wavelength quantum well distributed feedback diode lasers under gain switching

I. H. White, P. S. Griffin, K. A. Williams, G. H.B. Thompson, J. E.A. Whiteaway, B. Garrett

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

Abstract

The anomalous spectral performance of multiquantum well distributed feedback lasers under gain switching is reported. MQW performance is accounted for using a model including the effect of carriers in the barrier and waveguide regions.

Original languageEnglish
Title of host publicationConference Digest - 13th IEEE International Semiconductor Laser Conference
PublisherIEEE
Pages264-265
Number of pages2
ISBN (Electronic)4930813514
DOIs
Publication statusPublished - 1 Jan 1992
Event13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan
Duration: 21 Sept 199225 Sept 1992

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume1992-September
ISSN (Print)0899-9406

Conference

Conference13th IEEE International Semiconductor Laser Conference, ISLC 1992
Country/TerritoryJapan
CityTakamatsu, Kagawa
Period21/09/9225/09/92

Funding

damping of the gain. Other damping mechanisms such as spectral and longitudinal spatial hole burning are accounted for using the conventional non-linear gain coefficient E. Using the new model, agreement both in terms bf spectral shape and width is found between theory and experiment; as shown in figure 2 for example in the higher power modulation results which are particularly different in shape from those of bulk devices. Any ap arent differences in spectrum between theory and experiment may be accounted Po r by monochromator performance. Large secondary relaxation oscillations readily generated by the laser ive rise to a spiked central region of the laser spectrum, this being surrounded by a shapeB s pectrum from the main gain switched pulse. The theory indicates that both the capture time and the ambient carrier concentration ratio between barrier and well levels determine the large signal dynamic performance of the device. Optimisation of device performance is possible by structural control and this will be reported at the conference. Further detailed results will be provided at the conference, indicating major issues in high speed MQW laser design and taking into account secondary effects due to longitudinal hole burning. Arknowled cemen ts The authors are rateful for financial su port from the Science and En ‘neerin Research Council (SER8 ) , and for su ort from tK e European Community under 8e RfAC i pro ram 1057. Two of the authors, 8CGriffin and K.A.Williams, would like to thank both the EE RC and BNR Europe Ltd. for personal financial support. References [l]R .Na ara‘an et al, IEEE Photon. Technol. Lett., PT-4,121-123, (1992) [2] W.F.lhar!in et al, ECOC’91, Paper TuA4-4, Paris, (1991) [3] M.Osinski, D.F.G.Gallagher and I.H.White, Elect.Lett., 21,981-982, (1985)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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