Solution-Processed Perovskite Field-Effect Transistor Artificial Synapses

Beomjin Jeong, Paschalis Gkoupidenis, Kamal Asadi

Research output: Contribution to journalArticlepeer-review

31 Citations (SciVal)


Metal halide perovskites are distinctive semiconductors that exhibit both ionic and electronic transport and are promising for artificial synapses. However, developing a 3-terminal transistor artificial synapse with the perovskite channel remains elusive due to the lack of a proper technique to regulate mobile ions in a non-volatile manner. Here, a solution-processed perovskite transistor is reported for artificial synapses through the implementation of a ferroelectric gate. The ferroelectric polarization provides a non-volatile electric field on the perovskite, leading to fixation of the mobile ions and hence modulation of the electronic conductance of the channel. Multi-state channel conductance is realized by partial ferroelectric polarization. The ferroelectric-gated perovskite transistor is successfully used as an artificial synapse that emulates basic synaptic functions such as long-term plasticity with excellent linearity, short-term as well as spike-timing-dependent plasticity. The strategy to regulate ion dynamics in the perovskites using the ferroelectric gate suggests a generic route to employ perovskites for synaptic electronics.

Original languageEnglish
Article number2104034
JournalAdvanced Materials
Issue number52
Early online date22 Oct 2021
Publication statusPublished - 29 Dec 2021


  • artificial synapses
  • ferroelectrics
  • field-effect transistors
  • ion transport
  • metal halide perovskites
  • neuromorphic devices

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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