Abstract
Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H 2 /CH 4 . The realization of CAIBE in Ar/H 2 atmosphere is also achieved for the first time. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (V acc ), discharge current (I dis ) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H 2 chemistry. The etch rate of the InP structures is studied as a function of the I dis and the V acc . A maximum etch rate of 700 angstroms/min is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement between those is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al 2 O 3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask.
| Original language | English |
|---|---|
| Pages (from-to) | 139-146 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3936 |
| Publication status | Published - 1 Jan 2000 |
| Event | Integrated Optics Devices IV - San Jose, CA, USA Duration: 24 Jan 2000 → 25 Jan 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering