Smooth and anisotropic ion beam etching of InP with Ar/H 2 chemistry

Bulent Cakmak, Siyuan Yu, Richard V. Penty, Ian H. White

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H 2 /CH 4 . The realization of CAIBE in Ar/H 2 atmosphere is also achieved for the first time. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (V acc ), discharge current (I dis ) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H 2 chemistry. The etch rate of the InP structures is studied as a function of the I dis and the V acc . A maximum etch rate of 700 angstroms/min is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement between those is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al 2 O 3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask.

Original languageEnglish
Pages (from-to)139-146
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3936
Publication statusPublished - 1 Jan 2000
EventIntegrated Optics Devices IV - San Jose, CA, USA
Duration: 24 Jan 200025 Jan 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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