Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon

C. Hantschmann, P. P. Vasil'ev, S. Chen, M. Liao, A. J. Seeds, H. Liu, R. V. Penty, I. H. White

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

3 Citations (SciVal)

Abstract

The first small-signal modulation experiments with monolithic single transverse mode InAs/GaAs lasers on Si demonstrate a 3dB bandwidth of 1.6 GHz. By fitting the modulation response curves, we extract high-speed laser parameters allowing an insight into the intrinsic laser dynamics.

Original languageEnglish
Title of host publication2018 European Conference on Optical Communication, ECOC 2018
PublisherIEEE
Volume2018-September
ISBN (Electronic)9781538648629
DOIs
Publication statusPublished - 14 Nov 2018
Event2018 European Conference on Optical Communication, ECOC 2018 - Rome, Italy
Duration: 23 Sept 201827 Sept 2018

Publication series

NameEuropean Conference on Optical Communication
PublisherIEEE
ISSN (Print)2688-2531
ISSN (Electronic)2688-254X

Conference

Conference2018 European Conference on Optical Communication, ECOC 2018
Country/TerritoryItaly
CityRome
Period23/09/1827/09/18

Funding

This work is supported by UK EPSRC at the University of Cambridge and at University College London (UCL Grant No. EP/J0129041/1, EP/J012815/1). C. Hantschmann wishes to thank Qualcomm Inc. for PhD funding. S. Chen’s research fellowship is funded by the Royal Academy of Engineering (Reference No. RF201617/16/28).

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon'. Together they form a unique fingerprint.

Cite this