Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon

C. Hantschmann, P. P. Vasil'ev, S. Chen, M. Liao, A. J. Seeds, H. Liu, R. V. Penty, I. H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The first small-signal modulation experiments with monolithic single transverse mode InAs/GaAs lasers on Si demonstrate a 3dB bandwidth of 1.6 GHz. By fitting the modulation response curves, we extract high-speed laser parameters allowing an insight into the intrinsic laser dynamics.

Original languageEnglish
Title of host publication2018 European Conference on Optical Communication, ECOC 2018
PublisherIEEE
Volume2018-September
ISBN (Electronic)9781538648629
DOIs
Publication statusPublished - 14 Nov 2018
Event2018 European Conference on Optical Communication, ECOC 2018 - Rome, Italy
Duration: 23 Sep 201827 Sep 2018

Publication series

NameEuropean Conference on Optical Communication
PublisherIEEE
ISSN (Print)2688-2531
ISSN (Electronic)2688-254X

Conference

Conference2018 European Conference on Optical Communication, ECOC 2018
CountryItaly
CityRome
Period23/09/1827/09/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hantschmann, C., Vasil'ev, P. P., Chen, S., Liao, M., Seeds, A. J., Liu, H., Penty, R. V., & White, I. H. (2018). Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon. In 2018 European Conference on Optical Communication, ECOC 2018 (Vol. 2018-September). [8535583] (European Conference on Optical Communication). IEEE. https://doi.org/10.1109/ECOC.2018.8535583