Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films

Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO₂ films

G. Slavcheva

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@article{c7f51bba99314d3fbe2f0a66ab7e6df2,

title = "Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films",

author = "G. Slavcheva",

year = "1990",

month = nov,

day = "1",

doi = "10.1016/0040-6090(90)90477-U",

language = "English",

volume = "192",

pages = "41--57 ",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films

AU - Slavcheva, G.

PY - 1990/11/1

Y1 - 1990/11/1

UR - http://dx.doi.org/10.1016/0040-6090(90)90477-U

U2 - 10.1016/0040-6090(90)90477-U

DO - 10.1016/0040-6090(90)90477-U

M3 - Article

SN - 0040-6090

VL - 192

SP - 41

EP - 57

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -