Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films

G. Slavcheva

Research output: Contribution to journalArticle

47 Downloads (Pure)
Original languageEnglish
Pages (from-to)41-57
JournalThin Solid Films
Volume192
Issue number1
DOIs
Publication statusPublished - 1 Nov 1990

Cite this

Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films. / Slavcheva, G.

In: Thin Solid Films, Vol. 192, No. 1, 01.11.1990, p. 41-57 .

Research output: Contribution to journalArticle

@article{c7f51bba99314d3fbe2f0a66ab7e6df2,
title = "Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films",
author = "G. Slavcheva",
year = "1990",
month = "11",
day = "1",
doi = "10.1016/0040-6090(90)90477-U",
language = "English",
volume = "192",
pages = "41--57",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films

AU - Slavcheva, G.

PY - 1990/11/1

Y1 - 1990/11/1

UR - http://dx.doi.org/10.1016/0040-6090(90)90477-U

U2 - 10.1016/0040-6090(90)90477-U

DO - 10.1016/0040-6090(90)90477-U

M3 - Article

VL - 192

SP - 41

EP - 57

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -