Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC

G Brauer, W Anwand, P G Coleman, W Skorupa

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

ID number: ISI:000229617500005

Cite this

@article{4aceb5268282489f87c8fe0856fe1825,

title = "Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC",

author = "G Brauer and W Anwand and Coleman, \{P G\} and W Skorupa",

note = "ID number: ISI:000229617500005",

year = "2005",

language = "English",

volume = "78",

pages = "131--136",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC

AU - Brauer, G

AU - Anwand, W

AU - Coleman, P G

AU - Skorupa, W

N1 - ID number: ISI:000229617500005

PY - 2005

Y1 - 2005

UR - https://www.scopus.com/pages/publications/18544382539

M3 - Article

SN - 0042-207X

VL - 78

SP - 131

EP - 136

JO - Vacuum

JF - Vacuum

IS - 2-4

ER -